EP0056737A2
Expired / Lapsed
EP
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Method of manufacturing a semiconductor device using molecular beam epitaxy
Assignee: Hitachi Ltd
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Filing: 1982-01-20
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Granted: —
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Expires: 2002-01-20
Abstract
Abstract In a molecular beam epitaxy process, a semiconductor layer is evaporated onto a substrate (13) in a vacuum vessel (11) under ultra-high vacuum, from a first evaporation source (124). Subsequently, an insulator layer and a metal layer are evaporated onto the semiconductor layer from further sources (12, 12', 12", 121). To prevent the formation of surface states in the interface between the layers, which might adversely affect the mobility of carriers in a MOSFET subsequently formed, these subsequent layers are formed without removing the substrate from the vacuum.
Inventors
- 👤 Yasuhiro Shiraki
- 👤 Makoto Matsui
- 👤 Keisuke L I Kobayashi
- 👤 Yoshimasa Murayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 14:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; H10D30/0321; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/40; H10P14/412; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
117 words
A method of manufacturing a semiconductor device, including the step of evacuating a vacuum vessel (11) to an ultra-high vacuum,. the vessel containing a first evaporation source (124) and a substrate (13;41) having a surface onto which a layer is to be evaporated; and the step of forming a first evaporation layer (42) on said surface using the first evaporation source; characterised in that the vacuum vessel contains at least a second evaporation source (12), and the method includes the step of subsequently forming a second evaporation layer (43) on the first evaporation layer, using the second evaporation source, without removing the substrate from the vacuum vessel between the formation of the first and second evaporation layers.
Claim 2
Independent Claim
117 words
A method of manufacturing a semiconductor device, including the step of evacuating a vacuum vessel (11) to an ultra-high vacuum,. the vessel containing a first evaporation source (124) and a substrate (13;41) having a surface onto which a layer is to be evaporated; and the step of forming a first evaporation layer (42) on said surface using the first evaporation source; characterised in that the vacuum vessel contains at least a second evaporation source (12), and the method includes the step of subsequently forming a second evaporation layer (43) on the first evaporation layer, using the second evaporation source, without removing the substrate from the vacuum vessel between the formation of the first and second evaporation layers.
Claim 3
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 1 wherein one of the evaporation sources (124) is a semiconductor material, and another evaporation source (12) is an insulator material.
Claim 4
Dependent Claim
26 words
A method of manufacturing a semiconductor device according to claim 1 or claim 2 wherein the pressure of the ultra-high vacuum is at most 10-9 Torr.
Claim 5
Independent Claim
40 words
A method of manufacturing a semiconductor device according to any one of the preceding claims, including the step of forming one or more further evaporation layers (44) over the second evaporation layer without removing the substrate from the vacuum vessel.
Claim 6
Dependent Claim
85 words
A method of manufacturing a semiconductor device according to claim 4, wherein at least three evaporation sources (124,12,12',12",121) are used, a semiconductor layer (42) is formed on the substrate, an insulator layer (43) and a metal layer (44) are thereafter formed on said semiconductor layer, these steps being carried out without taking the resultant substrate out of the vacuum vessel, holes (45,46) are formed in at least said metal layer, and an impurity is introduced into at least said semiconductor layer through said metal layer.
Claim 7
Independent Claim
27 words
A method of manufacturing a semiconductor device according to any one of the preceding claims, wherein said substrate (13) is an amorphous substrate or a polycrystalline substrate.
Claim 8
Independent Claim
30 words
A method of manufacturing a semiconductor device according to any one of the preceding claims, wherein the temperature of the substrate is between room temperature and the softening temperature thereof.
References Cited (Backward Citations)
No citation records indexed.
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