EP0056571A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Multi-emitter type npn transistor
Assignee: Toshiba Corp
•
Filing: 1982-01-05
•
Granted: —
•
Expires: 2002-01-05
Abstract
Abstract A multi-emitter type npn transistor comprising: an n-type collector region (24), a p-type base region (28), a plurality of n-type emitter regions (30-1, 30-2) formed in the base region (28), a collector electrode (36) which is in contact with the collector region (24), a base electrode (40) which is in contact with that portion of the base region (28) which lies between any two adjacent ones of the plurality of emitter regions (30-1, 30-2), and a plurality of emitter electrodes (38-1, 38-2) which are in contact with the plurality of emitter regions (30-1, 30-2), respectively.
Inventors
- 👤 Masanori Nakai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 18:37
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D62/135; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D48/345; H10D64/00; H10D64/20; H10D64/27; H10D64/281
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
120 words
A multi-emitter type npn transistor comprising: a collector region (24) of n conductivity type, a base region (28) of p conductivity type, a plurality of emitter regions (30-1, 30-2, 30-3, 30-4) of n conductivity type formed in said base region (28), a collector electrode (36) which is in contact with said collector region (24), and a plurality of emitter electrodes (38-1, 38-2, 38-3, 38-4) which are in contact with the plurality of emitter regions (30-1, 30-2, 30-3, 30-4), respectively, characterized in that a base electrode (40, 42-1, 42-2, 42-3) is provided which is in contact with that portion of said base region (28) which lies between any two adjacent ones of said plurality of emitter regions (30-1, 30-2, 30-3, 30-4).
Claim 2
Dependent Claim
120 words
A multi-emitter type npn transistor comprising: a collector region (24) of n conductivity type, a base region (28) of p conductivity type, a plurality of emitter regions (30-1, 30-2, 30-3, 30-4) of n conductivity type formed in said base region (28), a collector electrode (36) which is in contact with said collector region (24), and a plurality of emitter electrodes (38-1, 38-2, 38-3, 38-4) which are in contact with the plurality of emitter regions (30-1, 30-2, 30-3, 30-4), respectively, characterized in that a base electrode (40, 42-1, 42-2, 42-3) is provided which is in contact with that portion of said base region (28) which lies between any two adjacent ones of said plurality of emitter regions (30-1, 30-2, 30-3, 30-4).
Claim 3
Dependent Claim
32 words
A multi-emitter type npn transitor according to claim 1, wherein at least one of said base electrodes (40, 42-1, 42-2, 42-3) is an electrode to be connected to an external power supply.
Claim 4
Dependent Claim
29 words
A multi-emitter type npn transistor according to claim 1, wherein said base electrodes (42-1, 42-2, 42-3) are connected one to another and connected commonly to an external power supply.
Claim 5
Dependent Claim
23 words
A multi-emitter type npn transistor according to claim 1, including a further base electrode (44) which is connected to an external power supply.
Claim 6
Dependent Claim
33 words
A multi-emitter type npn transistor according to claim 2, 3 or 4, wherein said base electrode (40, 42-1, 42-2, 42-3, 42-4) connected to the external power supply is set at a positive potential.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.