EP0055324A2
Expired / Lapsed
EP
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Monolithic microwave integrated circuit with integral array antenna
Assignee: Ball Corp
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Filing: 1981-09-05
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Granted: —
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Expires: 2001-09-05
Abstract
Abstract A monolithic microwave integrated circuit including an integral array antenna. The system includes radiating elements, feed network, phasing network, active and/or passive semiconductor devices, digital logic interface circuits and a microcomputer controller simultaneously incorporated on a single substrate by means of a controlled fabrication process sequence. Described is also a method for fabricating planar phase shifter for a monolithic microwave system.
Inventors
- 👤 Ronald J. Stockton
- 👤 Robert E. Munson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 08:09
CPC Classifications
H; H01; H01Q; H01Q1/00; H01Q1/36; H01Q1/38; H01Q3/00; H01Q3/26; H01Q3/30; H01Q3/34; H01Q3/36; H01Q3/38; H01Q3/385; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
52 words
A microwave antenna system, comprising: at least two receiving array elements; a phasing network for controlling a phase shift associated with each of said receiving array elements; and a microprocessor-based controller for controlling said phasing network, said array elements, phasing network and controller being integrated on a single substrate of semiconductor material.
Claim 2
Dependent Claim
52 words
A microwave antenna system, comprising: at least two receiving array elements; a phasing network for controlling a phase shift associated with each of said receiving array elements; and a microprocessor-based controller for controlling said phasing network, said array elements, phasing network and controller being integrated on a single substrate of semiconductor material.
Claim 3
Dependent Claim
76 words
A system according to claim 1 further including: an amplifier, associated with each array element, coupled via a phase shifter of said phasing network, for amplifying signals from its associated array element, the gain of said amplifiers being controlled by said controller; a receiver for detecting signals from said amplifiers; and a corporate feed for coupling signals from said amplifiers to said receiver, said amplifiers, receiver and corporate feed also being integrated onto said single substrate.
Claim 4
Dependent Claim
31 words
A system according to claim 1 or 2 further including means for causing the phase shifts of said phasing network to shift simultaneously, said means also integrated onto said single substrate.
Claim 5
Dependent Claim
12 words
A system according to claim 1, wherein said semiconductor material is GaAs.
Claim 6
Dependent Claim
53 words
An integrated monolithic microwave system, comprising: at least two transmitting array elements; a phasing network for controlling a phase shift associated with each of said transmitting array elements; and a microprocessor-based controller for controlling said phasing network, said array elements, phasing network and controller being integrated on a single substrate of semiconductor material.
Claim 7
Dependent Claim
53 words
An integrated monolithic microwave system, comprising: at least two transmitting array elements; a phasing network for controlling a phase shift associated with each of said transmitting array elements; and a microprocessor-based controller for controlling said phasing network, said array elements, phasing network and controller being integrated on a single substrate of semiconductor material.
Claim 8
Dependent Claim
80 words
A system according to claim 5 further including: I a power amplifier, associated with each array element, coupled via a phase shifter of said phasing network, providing signals to its associated array element, the gain of said amplifiers being controlled by said controller; a signal source for providing signals to said amplifiers; and a corporate feed for coupling signals from said signal source to said amplifiers, said amplifiers, signal source and corporate feed also being integrated onto said single substrate.
Claim 9
Dependent Claim
31 words
A system according to claim 5 or 6 further including means for causing the phase shifts of said phasing network to shift simultaneously, said means also integrated onto said single substrate.
Claim 10
Dependent Claim
12 words
A system according to claim 5 wherein said semiconductor material is GaAs.
Claim 11
Independent Claim
186 words
A method for fabricating planar phase shifter for a monolithic microwave system comprising the steps of: lapping and polishing a layer of semi-insulating GaAs to a plane parallel thickness compatible with microstrip propagation, said layer serving as a substrate for said monolithic microwave system; , covering the substrate with Si0 2 and a metal; opening windows in said metal; removing the Si0 2 , exposed through said windows by dry etching; ion implanting to form N+ regions; . removing the remaining metal and Si0 2 from a source to drain gap region; ion implanting an active layer; defining an alignment mark by ion milling; removing any remaining metal and photo-resist material; depositing a nitride and an oxide; annealing the implantations; removing the insulators; defining ohmic contact holes using a photolithographic technique; depositing metallizations of AuGe-Pt; depositing a layer of Si0 2 ; defining gate and ohmic contact holes; removing exposed Si0 2 by plasma etching; depositing metallizations of TiPtAu; defining gate and circuit path areas using a photo-resist technique; and removing exposed metal by ion-milling to form microstrip transmission lines, radiating elements and biasing interconnect metallizations.
Claim 12
Independent Claim
186 words
A method for fabricating planar phase shifter for a monolithic microwave system comprising the steps of: lapping and polishing a layer of semi-insulating GaAs to a plane parallel thickness compatible with microstrip propagation, said layer serving as a substrate for said monolithic microwave system; , covering the substrate with Si0 2 and a metal; opening windows in said metal; removing the Si0 2 , exposed through said windows by dry etching; ion implanting to form N+ regions; . removing the remaining metal and Si0 2 from a source to drain gap region; ion implanting an active layer; defining an alignment mark by ion milling; removing any remaining metal and photo-resist material; depositing a nitride and an oxide; annealing the implantations; removing the insulators; defining ohmic contact holes using a photolithographic technique; depositing metallizations of AuGe-Pt; depositing a layer of Si0 2 ; defining gate and ohmic contact holes; removing exposed Si0 2 by plasma etching; depositing metallizations of TiPtAu; defining gate and circuit path areas using a photo-resist technique; and removing exposed metal by ion-milling to form microstrip transmission lines, radiating elements and biasing interconnect metallizations.
References Cited (Backward Citations)
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