EP0053490A1
Expired / Lapsed
EP
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Method for manufacturing a fine-patterned thick film conductor structure
Assignee: Asahi Kasei Corp
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Filing: 1981-11-26
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Granted: —
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Expires: 2001-11-26
Abstract
Abstract The manufacture of a fine-patterned thick-film conductor structure, e.g. a printed-circuit board, comprising the steps of forming a plating resist (2) on a thin metal plate (1) at areas other than land areas, electroplating the thin metal plate using the thin metal plate as a cathode electrode to a thickness of 0.3-10 µm at a current density of 0.05-2A/dm 2 and to the desired thickness at 3-50 A/dm 2 to form conductors (3) having a circuit density of no less than three lines/mm and a thickness of 15-200 µm, bonding the electroplated thin metal plate to an insulative substrate (5) with the thin metal plate side facing up using a bonding agent (4) and etching the thin metal plate, or removing all or the areas other than the land areas of the thin metal plate.
Inventors
- 👤 Kaoru Ohmura
- 👤 Ryohei Koyama
- 👤 Takeo Kimura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 04:31
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/10; H05K3/20; H05K3/205; H05K2203/00; H05K2203/01; H05K2203/0147; H05K2203/0152; H05K2203/03; H05K2203/0376; H05K2203/07; H05K2203/0703; H05K2203/0726; H05K3/38; H05K3/386
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
95 words
A method for manufacturing a fine-patterned thick film conductor structure comprising: (a) forming a resist on a thin metal plate at areas other than land areas and electroplating the land areas using the thin metal plate as a cathode electrode to form electroplated conductor layers having a circuit density of not less than 3 lines/mm and a film thickness of 15 to 200 pm; (b) bonding the electroplated side of the electroplated thin metal plate to an insulative substrate or coating the electroplated side with an insulative material; (c) etching away the thin metal plate.
Claim 2
Independent Claim
95 words
A method for manufacturing a fine-patterned thick film conductor structure comprising: (a) forming a resist on a thin metal plate at areas other than land areas and electroplating the land areas using the thin metal plate as a cathode electrode to form electroplated conductor layers having a circuit density of not less than 3 lines/mm and a film thickness of 15 to 200 pm; (b) bonding the electroplated side of the electroplated thin metal plate to an insulative substrate or coating the electroplated side with an insulative material; (c) etching away the thin metal plate.
Claim 3
Dependent Claim
59 words
A method according to Claim 1, wherein the cathode current density in the electroplating is from 0.05 to 2 A/ dm 2 until the thickness of the electroplated conductor layers reaches 0.3 to 10 µm, and thereafter the current density is increased to 3 to 50 A/dm 2 until the total conductor layer thickness reaches 15 to 200 µm.
Claim 4
Dependent Claim
35 words
A method according to Claim 1 or 2, wherein an electroplated thin metal plate is bonded on each side of the insulative substrate so that the conductor patterns of the plates face towards each other.
Claim 5
Dependent Claim
38 words
A method according to Claim 3, further comprising drilling through-holes at through-hole connection areas of the conductor pattern on the insulative substrate after the thin metal plates on both sides of the insulative substrate have been etched away.
Claim 6
Independent Claim
41 words
A method according to any one of Claims 1 to 4, ' comprising further electroplating the exposed electroplated conductor layers after the thin metal plate has been etched away to form conductor layers having a thickness of 15 to 200 µm.
Claim 7
Dependent Claim
34 words
A method according to Claim 5, wherein the cathode current density in the electroplating of the exposed conductor layers after the etching of the thin metal plate is from 3 to.50 A/dm 2 .
Claim 8
Independent Claim
29 words
A method according to any one of Claims 1 to 6, wherein the thin metal plate is aluminum, tin or zinc having a thickness of 1 to 500 µm.
Claim 9
Independent Claim
20 words
A method according to any one of Claims 1 to 7; wherein the material of the conductor layers is copper.
Claim 10
Independent Claim
27 words
A method according to any one of Claims 1 to 8, wherein the insulative substrate is a polymer film having a thickness of 5 to 200 µm.
Claim 11
Independent Claim
38 words
A method according to any one of Claims 2 to 9, wherein the ratio of plated film thickness to line-to-line spacing is not less than 1.4 at a cathode current density of not less than 3 A/dm .
Claim 12
Independent Claim
112 words
A method for manufacturing a fine-patterned thick film printed circuit board comprising: (a) forming a resist on a thin metal plate at areas other than land areas; (b) electroplating the thin metal plate to a thickness of 0.3 to 10 µm at a current density of 0.05 to 2 A/dm 2 ; (c) electroplating the thin metal plate to a desired film thickness at a current density of 3 to 20 A/ dm 2 to form electroplated conductor layers on the land areas; and (d) before or after bonding the thin metal plate to an insulative substrate, removing all or the areas other than the land areas of the thin metal plate.
Claim 13
Independent Claim
112 words
A method for manufacturing a fine-patterned thick film printed circuit board comprising: (a) forming a resist on a thin metal plate at areas other than land areas; (b) electroplating the thin metal plate to a thickness of 0.3 to 10 µm at a current density of 0.05 to 2 A/dm 2 ; (c) electroplating the thin metal plate to a desired film thickness at a current density of 3 to 20 A/ dm 2 to form electroplated conductor layers on the land areas; and (d) before or after bonding the thin metal plate to an insulative substrate, removing all or the areas other than the land areas of the thin metal plate.
Claim 14
Dependent Claim
34 words
A method according to Claim 11, wherein the ratio of plated film thickness to line-to-line spacing is not less than 1.4 at a cathode current density of not less than 3 A/dm 2 .
References Cited (Backward Citations)
US2692490A
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FR1106490A
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FR1318654A
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GB1258856A
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US3704207A
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US4159222A
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