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EP0052040A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

CMOS-integrated class AB amplifier

Assignee: Pour L'etude Et La Fabrication De Circuits Integres Speciaux - Efcis Ste
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Filing: 1981-10-23
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Granted: —
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Expires: 2001-10-23
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Abstract

Abstract Translated from French Amplificateur dont l'étage de sortie comprend un transistor bipolaire NPN (T1) et un transistor MOS à canal N (T3) montés en série à la manière d'un étage «push-pull». Le transistor NPN est commandé directement sur sa base par le signal à amplifier. Le transistor MOS (T3) reçoit sur sa grille de commande le signal de sortie d'un amplificateur différentiel dont les entrées sont connectées d'une part à la sortie (S) de l'amplificateur et d'autre part sur l'émetteur (E2) d'un autre transistor bipolaire T2 recevant sur sa base le signal à amplifier. Application: amplificateurs intégrés capables de sortir notamment sur une charge normalisée de 600 Ω. Amplifier whose output stage comprises an NPN bipolar transistor (T1) and an N-channel MOS transistor (T3) connected in series in the manner of a "push-pull" stage. The NPN transistor is controlled directly on its base by the signal to be amplified. The MOS transistor (T3) receives on its control gate the output signal from a differential amplifier whose inputs are connected on the one hand to the output (S) of the amplifier and on the other hand to the emitter ( E2) of another bipolar transistor T2 receiving on its base the signal to be amplified. Application: integrated amplifiers capable of output, in particular on a standard load of 600 Ω.

Inventors

  • 👤 Jean-Claude Bertails
  • 👤 Christian Perrin
  • 👤 Louis Tallaron

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 13:31
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/50; H03F3/505

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