EP0051980A1
Expired / Lapsed
EP
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Photovoltaic device and photoelectrochemical cell electrode
Assignee: Atlantic Richfield Co
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Filing: 1981-11-04
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Granted: —
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Expires: 2001-11-04
Abstract
Abstract Open circuit voltage enhancement of photovoltaic devices (10) and electrophotochemical cell electrodes (74) is made possible by adding a thin insulating layer (16, 80) to the semiconductor bodies (13, 76) of the devices. The insulating layer may be added between semiconductor layers of different conductivity within the active photoresponsive regions of the bodies. The bodies may be formed from an amorphous silicon alloy containing fluorine, and preferably hydrogen. The fluorine acts as a compensating or altering eiement to reduce the density of states in the energy gap thereof. The semiconductor bodies may be also formed trom crystalline or polycrystalline semiconductor materials as well. Also disclosed is an electrode for use in an electrophotochemical cell, which electrode includes an insulating layer (80) over the semiconductor electrode body (76) in accordance with the present invention. The insulating layer enhances the open circuit voltage of the devices without affecting short circuit current to increase the efficiency of the devices.
Inventors
- 👤 Arun Madan
- 👤 Stanford Robert Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 19:42
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H01; H01G; H01G9/00; H01G9/20; H10F10/12; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
70 words
A photovoltaic device, said device comprising superimposed layers of various materials including a semiconductor body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said body including at least two semiconductor layers of different conductivity and open circuit voltage enhancement means between said semiconductor layers, said enhancement means comprising means for suppressing majority carrier current flow between said semiconductor layers.
Claim 2
Dependent Claim
70 words
A photovoltaic device, said device comprising superimposed layers of various materials including a semiconductor body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said body including at least two semiconductor layers of different conductivity and open circuit voltage enhancement means between said semiconductor layers, said enhancement means comprising means for suppressing majority carrier current flow between said semiconductor layers.
Claim 3
Dependent Claim
20 words
A device as defined in claim 1 wherein said enhancement means comprises a thin insulating layer between said semiconductor layers.
Claim 4
Dependent Claim
59 words
An electrode for a photoelectrochemical cell of the type including an electrolytic fluid, said electrode comprising a semiconductor body having at least one semiconductor layer and an open circuit voltage enhancement means on said layer, said enhancement means being a thin insulating layer adapted to be in contact with said electrolytic fluid to increase the efficiency of said cell.
Claim 5
Dependent Claim
59 words
An electrode for a photoelectrochemical cell of the type including an electrolytic fluid, said electrode comprising a semiconductor body having at least one semiconductor layer and an open circuit voltage enhancement means on said layer, said enhancement means being a thin insulating layer adapted to be in contact with said electrolytic fluid to increase the efficiency of said cell.
Claim 6
Dependent Claim
17 words
An article as defined in any preceding claim, wherein said semiconductor body comprises an amorphous semiconductor alloy.
Claim 7
Dependent Claim
22 words
An article as defined in claim 4, wherein said alloy comprises a body of amorphous semiconductor deposited from silane (SiH 4 ).
Claim 8
Dependent Claim
23 words
An article as defined in claim 4, wherein said alloy comprises a body of amorphous semiconductor deposited from silicon tetrafluoride (SiF 4 ).
Claim 9
Dependent Claim
29 words
An article as defined in any one of claims 4 to 6, wherein said amorphous alloy includes at least one density of states reducing element, said element being fluorine.
Claim 10
Dependent Claim
24 words
An article as defined in claim 7, wherein said amorphous alloy further includes a second density of states reducing element, said element being hydrogen.
Claim 11
Dependent Claim
16 words
An article as defined in any preceding claim, wherein said semiconductor body comprises a silicon-germanium alloy.
Claim 12
Dependent Claim
20 words
An article as defined in any one of claims 1 to 4, wherein said semiconductor body comprises a crystalline semiconductor.
Claim 13
Dependent Claim
17 words
An article as defined in claim 10 wherein said crystalline semiconductor comprises gallium arsinide (GaAs) or silicon.
Claim 14
Dependent Claim
26 words
An article as defined in any preceding claim having at least two semiconductor layers, said layers including a p conductivity layer and an n conductivity layer.
Claim 15
Dependent Claim
56 words
An article as defined in any preceding claim, wherein said semiconductor body comprises an inner intrinsic layer and a pair of outer layers on respective opposite sides of said intrinsic layer and being of respective p or n conductivities, and wherein said insulating layer is disposed between said intrinsic layer and one of said outer layers.
Claim 16
Independent Claim
55 words
A method of making a photovoltaic device comprising the steps of: depositing at least a first layer of semiconductor material on a substrate; forming an insulating layer over said first layer; and depositing a second layer of semiconductor material over said insulating layer, said second layer being of a different conductivity than said first layer.
Claim 17
Independent Claim
55 words
A method of making a photovoltaic device comprising the steps of: depositing at least a first layer of semiconductor material on a substrate; forming an insulating layer over said first layer; and depositing a second layer of semiconductor material over said insulating layer, said second layer being of a different conductivity than said first layer.
Claim 18
Dependent Claim
33 words
A method as defined in claim 14, wherein said layers of semiconductor material are formed from an amorphous semiconductor alloy including at least silicon, and at least one density of states reducing element.
Claim 19
Dependent Claim
12 words
A method as defined in claim 15, wherein said element is fluorine.
Claim 20
Dependent Claim
24 words
A method as defined in claim 16, wherein said alloy further includes a second density of states reducing element, said second element being hydrogen.
References Cited (Backward Citations)
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