EP0051500B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor devices
Assignee: Fujitsu Ltd
•
Filing: 1981-11-05
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Granted: 1986-02-19
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Expires: 2001-11-05
Abstract
No abstract record available.
Inventors
- 👤 Shin-Ichi Inoue
- 👤 Nobuo Toyokura
- 👤 Hajime Ishikawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 19:45
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/60; H10D64/62; H10P32/17; H10P32/171; H10P32/30; H10P32/302; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
114 words
A semiconductor device comprising a semiconductor substrate provided with an impurity introduced region of a desired conductivity type, a conductor layer (25, 26, 56) of a metal silicide which is electrically connected to a prescribed surface portion of said semiconductor substrate and/or is placed on an insulating film formed on said semiconductor substrate, and an insulating layer (27, 57) of an oxide of said metal silicide formed on said conductor layer, wherein the said metal silicide contains prescribed impurities in an amount effective to increase its rate of oxidation, and at least 1 x 1 020 atoms/cm 3 , but not so great as to impair its adhesion to the substrate on heat treatment.
Claim 2
Dependent Claim
114 words
A semiconductor device comprising a semiconductor substrate provided with an impurity introduced region of a desired conductivity type, a conductor layer (25, 26, 56) of a metal silicide which is electrically connected to a prescribed surface portion of said semiconductor substrate and/or is placed on an insulating film formed on said semiconductor substrate, and an insulating layer (27, 57) of an oxide of said metal silicide formed on said conductor layer, wherein the said metal silicide contains prescribed impurities in an amount effective to increase its rate of oxidation, and at least 1 x 1 020 atoms/cm 3 , but not so great as to impair its adhesion to the substrate on heat treatment.
Claim 3
Dependent Claim
34 words
A semiconductor device claimed in claim 1, characterized in that said metal silicide is a compound of silicon and at least a metal selected from the group consisting of molybdenum, tungsten, tantalum and titanium.
Claim 4
Dependent Claim
17 words
A semiconductor device claimed in claim 2, characterized in that said metal is molybdenum, tungsten or tantalum.
Claim 5
Dependent Claim
41 words
A semiconductor device claimed in claim 1, characterized in that said semiconductor substrate is of single crystalline silicon and said impurities contained in the metal silicide are donor impurities such as phosphorus, arsenic or antimony or acceptor impurities such as boron.
Claim 6
Dependent Claim
30 words
A semiconductor device claimed in claim 4, characterized in that the concentration of said impurities in said metal silicide is in the range from 1x1020 to 4x1021 atoms/cm 3 .
Claim 7
Dependent Claim
20 words
A semiconductor device claimed in claim 1, characterized in that a polycrystalline semiconductor layer is formed under said conductor layer.
Claim 8
Dependent Claim
18 words
A semiconductor device claimed in claim 6, characterized in that said polycrystalline semiconductor layer is of polycrystalline silicon.
Claim 9
Dependent Claim
25 words
A semiconductor device claimed in claim 7, characterized in that said polycrystalline silicon layer has a thickness in the range from 50 to 300 nm.
Claim 10
Dependent Claim
19 words
A semiconductor device claimed in claim 1, characterized in that another conductor layer is formed on said insulating layer.
References Cited (Backward Citations)
No citation records indexed.
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