EP0050972A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device with an interconnection electrode layer
Assignee: Toshiba Corp
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Filing: 1981-10-23
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Granted: —
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Expires: 2001-10-23
Abstract
Abstract A method for manufacturing a semiconductor device having a highly reliably interconnection electrode layer (27) is disclosed, which comprises the steps of forming a first material layer (23) on a semiconductor substrate (21), forming a second material layer (24) made of silicon nitride on the first material layer (23), selectively removing the second material layer (24) by a reactive ion etching method using a gas containing hydrogen and carbon-halogen bonds, to form an opening (26a) with a sloped side wall, and selectively removing the first material layer (23) by an etching method permitting the first and second material layers (23, 24) to be etched away, to form an opening (26b) with a sloped side wall.
Inventors
- 👤 Shohei Shima
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 06:15
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
149 words
A method for manufacturing a semiconductor device comprising a step of forming a first material (23) layer on a semiconductor substrate (21), a step of forming a second material layer (24) made of silicon nitride on the first material layer (23), a first etching step of selectively removing the second material layer (24), and a second etching step of selectively removing the first material layer (23) with the second material layer (24) as a mask, characterized in that said second material layer (24) is selectively removed by a reactive ion etching method using a gas containing hydrogen and carbon-halogen bonds to form an opening (26a) with a sloped side wall, and said first material layer (23) is selectively removed by an etching method to form an opening (26b) with a sloped side wall, said etching method permitting said first and second materials layers (23, 24) to be etched away.
Claim 2
Independent Claim
149 words
A method for manufacturing a semiconductor device comprising a step of forming a first material (23) layer on a semiconductor substrate (21), a step of forming a second material layer (24) made of silicon nitride on the first material layer (23), a first etching step of selectively removing the second material layer (24), and a second etching step of selectively removing the first material layer (23) with the second material layer (24) as a mask, characterized in that said second material layer (24) is selectively removed by a reactive ion etching method using a gas containing hydrogen and carbon-halogen bonds to form an opening (26a) with a sloped side wall, and said first material layer (23) is selectively removed by an etching method to form an opening (26b) with a sloped side wall, said etching method permitting said first and second materials layers (23, 24) to be etched away.
Claim 3
Dependent Claim
45 words
A method according to claim 1, wherein said gas containing hydrogen and carbon-halogen bonds is a gas nixture of CF 4 , C 2 F 6 , C 3 F 8 , CCt 4 or CF 3 Br and H 2 or CHF 3 gas.
Claim 4
Dependent Claim
61 words
A method according to claim 1, wherein said gas containing hydrogen and carbon-halogen bonds is a gas mixture of CF 4 , C 2 F 6 , C 3 F 8 , CCt4 or CF 3 Br and H 2 in which the volume of H 2 is 10 to 40 volume percent of the total volume of said gas mixture.
Claim 5
Independent Claim
51 words
A method according to any one of claims 1 to 3 in which said first material layer (23) is a silicon oxide layer and said second etching step is performed by a reactive ion etching method using a gas mixture of a fluorocarbon gas and H 2 gas as an etchant.
Claim 6
Independent Claim
41 words
A method according to any one of claims 1 to 3 in which said first material layer (23) is an aluminium layer and said second etching step is performed by a dry etching method using a chloro-carbon gas as an etchant.
Claim 7
Independent Claim
42 words
A method according to any one of claims 1 to 3, in which said first material layer (23) is a polycrystalline silicon layer and said second etching step is performed by a dry etching method using a fluorocarbon gas as an etchant.
References Cited (Backward Citations)
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