EP0049791A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device with a heat dissipating substrate
Assignee: Hitachi Ltd
•
Filing: 1981-09-24
•
Granted: —
•
Expires: 2001-09-24
Abstract
Abstract In a semiconductor device comprising a semiconductor element or elements supported on a heat spreading substrate, the heat spreading substrate being a Cu-carbon fiber composite material having at least 30 cross points/in<2> (4.6 cross points/cm<2>).
Inventors
- 👤 Akio Chiba
- 👤 Seiki Shimizu
- 👤 Keiichi Kuniya
- 👤 Zin Onuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 05:54
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W40/228; H10W72/00; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
84 words
A semiconductor device comprising a single or a plurality of semiconductor elements (7) disposed on a heat spreading (3, 5a, 5b) substrate made of a Cu-carbon fiber composite material, characterized in that carbon fibers are arranged in parallel with the end faces of the substrate and in a cross array to form at least 30 cross points/in 2 (4.6 cross points/cm 2 ), each of lines forming said cross points being constituted by a group of 500 to 6000 of fine, flexible carbon fibers.
Claim 2
Dependent Claim
84 words
A semiconductor device comprising a single or a plurality of semiconductor elements (7) disposed on a heat spreading (3, 5a, 5b) substrate made of a Cu-carbon fiber composite material, characterized in that carbon fibers are arranged in parallel with the end faces of the substrate and in a cross array to form at least 30 cross points/in 2 (4.6 cross points/cm 2 ), each of lines forming said cross points being constituted by a group of 500 to 6000 of fine, flexible carbon fibers.
Claim 3
Dependent Claim
37 words
The semiconductor device as defined in claim 1, characterized in that said Cu-carbon fiber composite material has areas defined by at least 4 cross points, each of said areas being smaller than the area of said semiconductor.
Claim 4
Dependent Claim
27 words
The semiconductor device as defined in claim 1, characterized in that said Cu-carbon fiber composite material has a carbon fiber content of 10 to 70% by volume.
Claim 5
Dependent Claim
68 words
The semiconductor device as defined in claim 1, characterized in that a metal having a higher heat conductivity than that of copper is packed in cross gap portions (13) between said Cu-carbon fibers (11, 12) of said Cu-carbon fiber composite material. 5. The semiconductor device as defined in claim 1, characterized in that said carbon fibers of said Cu-carbon fiber composite material has a diameter of 7 µm.
Claim 6
Dependent Claim
26 words
The semiconductor device as defined in claim 1, characterized in that carbon fibers of said Cu-carbon fiber composite material has a weaving structure of plain fabrics.
Claim 7
Dependent Claim
25 words
The semiconductor device as defined in claim 1, characterized in that said heat spreading substrate (3, 5a, 5b) is fixed on an insulating material (4).
Claim 8
Dependent Claim
29 words
The semiconductor device as defined in claim 7, characterized in that said insulating material (4) is fixed on a heat radiating substrate (3) of the Cu-carbon fiber composite material.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.