EP0048474A1
Expired / Lapsed
EP
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Self-substrate-bias circuit device
Assignee: Toshiba Corp
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Filing: 1981-09-18
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Granted: —
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Expires: 2001-09-18
Abstract
Abstract A self-substrate-bias circuit device comprising substrate (32) of P conductivity type, a capacitor element (34) of MOS construction formed in said semiconductor substrate (32) and whose one end is connected to the output terminal of a pulse generator (12), a diode element (36) formed in said semiconductor substrate (32) and connected between the other end of said capacitor element (34) and a ground potential, and a P + region (50) formed in the region of said semiconductor substrate (32) which surrounds said capacitor element (34) and having higher impurity concentration than that of said semiconductor substrate (32).
Inventors
- 👤 Hideharu Koike
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:38
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/211; H10D89/213; H10D89/215; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
103 words
A self-substrate-bias circuit device comprising: a semiconductor substrate (32) of P conductivity type; a capacitor element (34) of MOS construction formed in said semiconductor substrate (32) and whose one end is connected to the output terminal of a pulse generator (12); a diode element (36) formed in said semiconductor substrate (32) and connected between the other end of said capacitor element (34) and a reference potential; and a region (50) of said conductivity type formed in that region of said semiconductor substrate (32) which is contacted to said capacitor element (34) and having higher impurity concentration than that of said semiconductor substrate (32).
Claim 2
Dependent Claim
103 words
A self-substrate-bias circuit device comprising: a semiconductor substrate (32) of P conductivity type; a capacitor element (34) of MOS construction formed in said semiconductor substrate (32) and whose one end is connected to the output terminal of a pulse generator (12); a diode element (36) formed in said semiconductor substrate (32) and connected between the other end of said capacitor element (34) and a reference potential; and a region (50) of said conductivity type formed in that region of said semiconductor substrate (32) which is contacted to said capacitor element (34) and having higher impurity concentration than that of said semiconductor substrate (32).
Claim 3
Dependent Claim
29 words
A self-substrate-bias circuit device according to claim 1 further comprising a diode element (38) formed between the other end of said capacitor element (34) and said semiconductor substrate (32).
Claim 4
Dependent Claim
19 words
A self-substrate-bias circuit device according to claim 1 or 2 wherein said capacitor element (34) is of N-channel type.
Claim 5
Dependent Claim
19 words
A self-substrate-bias circuit device according to claim 1 or 2 wherein said capacitor element (34) is of P-channel type.
Claim 6
Dependent Claim
18 words
A self-substrate-bias circuit device according to claim 1 or 2 wherein said diode elements (36, 38) are MOS-constructed.
Claim 7
Dependent Claim
18 words
A self-substrate-bias circuit device according to claim 5 wherein said diode elements (36, 38) are of N-channel type.
Claim 8
Dependent Claim
17 words
A self-substrate-bias circuit.device according to claim 5 wherein said diode elements (36, 38) are of P-channel type.
Claim 9
Dependent Claim
16 words
A self-substrate-bias circuit device according to claim 1 wherein said reference potential is a ground potential.
Claim 10
Dependent Claim
37 words
A self-substrate-bias circuit device according to claim 2 wherein said region (50) is formed in that region of said semiconductor substrate (32) which is contacted to said capacitor element (34) and said two diode elements (36, 38).
Claim 11
Dependent Claim
47 words
A self-substrate-bias circuit device according to claim 2 wherein each of said diode elements (36, 38) has that region formed between the anode and cathode (52, 54; 52A, 54A), which is of said conductivity type and has a impurity concentration lower than that of said region (32).
References Cited (Backward Citations)
DE2620973A1
Cited
EP0014310A1
Cited
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