EP0047601A1
Expired / Lapsed
EP
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Semiconductor injection laser
Assignee: Xerox Corp
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Filing: 1981-08-21
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Granted: —
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Expires: 2001-08-21
Abstract
Abstract A semiconductor injection laser (10) is provided with an integrated optical injector means on the same substrate as the laser, which has an optical emitter region non-collinear with the axis of optical emission from the laser but optically coupled to the laser at one or more points along its length. The optical injector means is independently operative prior to or simultaneously with the independently operated laser to inject radiation into the laser optical emitter region to decrease the response time of the laser to pulsed current modulation.
Inventors
- 👤 Dan H. Fekete
- 👤 Donald R. Scifres
- 👤 William Streifer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 09:38
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4006; H01S5/06; H01S5/0607; H01S5/0608; H01S5/10; H01S5/1028; H01S5/1032; H01S5/02; H01S5/026; H01S5/062; H01S5/06209; H01S5/06216; H01S5/1003
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
148 words
A semiconductor injection laser (10) for high speed modulation wherein several layers (14, 16, 18, 20, 24, 26) of semiconductor material are fabricated on a semiconductor substrate (12), one of said layers forming an active layer (16) wherein radiation is generated upon forward biasing of said laser and upon applying pumping current to said active layer in excess of its lasing threshold whereby an optical emitter region is created having an axis along which the generated radiation propogates, characterised by optical injector means (22) on the same substrate as said laser and having its own optical emitting region non-collinear with the axis of optical emission of said laser but optically coupled thereto at at least one point therealong, said injector means independently operative prior to or with the independent operation of said laser to inject radiation into said laser thereby decreasing its response time to pulsed current modulation.
Claim 2
Dependent Claim
148 words
A semiconductor injection laser (10) for high speed modulation wherein several layers (14, 16, 18, 20, 24, 26) of semiconductor material are fabricated on a semiconductor substrate (12), one of said layers forming an active layer (16) wherein radiation is generated upon forward biasing of said laser and upon applying pumping current to said active layer in excess of its lasing threshold whereby an optical emitter region is created having an axis along which the generated radiation propogates, characterised by optical injector means (22) on the same substrate as said laser and having its own optical emitting region non-collinear with the axis of optical emission of said laser but optically coupled thereto at at least one point therealong, said injector means independently operative prior to or with the independent operation of said laser to inject radiation into said laser thereby decreasing its response time to pulsed current modulation.
Claim 3
Dependent Claim
21 words
The laser of claim 1, characterised in that the optical emitter regions are optically coupled via a common connected portion (34).
Claim 4
Dependent Claim
46 words
The laser of claim 1, characterised in that the optical emiter regions of said laser and injector means are optically coupled by disposing them in proximity to each other such that there is overlapping radiation from said injector means into the emitter region of said laser.
Claim 5
Dependent Claim
40 words
The laser of claim 1, characterised in that there is more than one laser on said substrate, with any pair of said lasers being optically coupled at one point along their axis of radiation propagation by single optical injector means.
Claim 6
Dependent Claim
29 words
The laser of claim 1 or 4, characterised in that there is more than one optical injector means on said substrate to inject radiation into said laser emitter region.
References Cited (Backward Citations)
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