EP0045593A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for producing semiconductor device
Assignee: Fujitsu Ltd
•
Filing: 1981-07-23
•
Granted: —
•
Expires: 2001-07-23
Abstract
Abstract A Process for producing a semiconductor device comprises a step of annealing a porous passivation layer 8, which is deposited on the surface of the device and which covers metallization layers 7 fabricated thereon, by irradiating a laser beam on the passivation layer 8 so as to densify the passivation layer, while the laser beam scans the surface of the passivation layer.
Inventors
- 👤 Kanetake Takasaki
- 👤 Yoshimi Shioya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 08:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6542; H10P14/6922; H10P14/6923; H10P14/694; H10P14/6943; H10P14/69433; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6336; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
61 words
A process for producing a semiconductor device, characterized by comprising a step of annealing a porous passivation layer which is deposited on the surface of said device and which covers metallization layers fabricated thereon by irradiating a laser beam on said passivation layer so as to densify said passivation layer, while said laser beam scans the surface of said passivation layer.
Claim 2
Dependent Claim
61 words
A process for producing a semiconductor device, characterized by comprising a step of annealing a porous passivation layer which is deposited on the surface of said device and which covers metallization layers fabricated thereon by irradiating a laser beam on said passivation layer so as to densify said passivation layer, while said laser beam scans the surface of said passivation layer.
Claim 3
Dependent Claim
18 words
A process according to claim 1, wherein said laser beam is a continuous beam or a pulsed beam.
Claim 4
Dependent Claim
21 words
A process according to claim 2, wherein said laser beam is generated by a YAG, ruby, argon or carbon dioxide laser.
Claim 5
Dependent Claim
22 words
A process according to claim 1, wherein said passivation layer is made from silicon nitride, or silicon oxide or phosphorus silicate glass.
Claim 6
Dependent Claim
15 words
A process according to claim 1, wherein said metallization layers are composed mainly of aluminium.
Claim 7
Dependent Claim
21 words
A process according to claim-5, wherein said metallization layers are composed of aluminium containing a small amount of silicon or copper.
Claim 8
Dependent Claim
63 words
A process for producing a semiconductor device, characterised by comprising a step of annealing a porous passivation layer which is deposited on the surface of said device and which covers metallization layers fabricated thereon by irradiation a laser beam on said passivation layer so as to eliminate micro-pores from the passivation layer, while said laser beam scans the surface of said passivation layer.
Claim 9
Dependent Claim
63 words
A process for producing a semiconductor device, characterised by comprising a step of annealing a porous passivation layer which is deposited on the surface of said device and which covers metallization layers fabricated thereon by irradiation a laser beam on said passivation layer so as to eliminate micro-pores from the passivation layer, while said laser beam scans the surface of said passivation layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.