EP0039223A2
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EP
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Electrophotographic member and method of operating an electrophotographic member
Assignee: Hitachi Ltd
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Filing: 1981-04-24
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Granted: —
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Expires: 2001-04-24
Abstract
Abstract An electrophotographic member has an amorphous-silicon photoconductive layer (2) on a support (1). To reduce the residual potential of the photoconductive layer, the distance between (a) the region thereof at which the intensity of illuminating light is reduced by absorption therein to 1 %ofthe intensity at incidence and (b) the surface of the layer (2) opposite to the light incidence side thereof is at most 5 µm. A region (25) of the photoconductive layer (2) which is at least 10 nm thick and extends inwardly of the layer (2) from the surface thereof for charge storage is made of amorphous silicon of optical forbidden band gap of at least 1.6 eV and resistivity of at least 10 10 Ω.cm. Within the layer (2) there is a region (24) of amorphous silicon of optical forbidden band gap smaller than that of the surface region (25) and thickness at least 10 nm. This region (24) of the narrower optical forbidden band gap increases the sensitivity of the photoconductive layer to light of longer wavelengths.
Inventors
- 👤 Sachio Ishioka
- 👤 Eiichi Maruyama
- 👤 Yoshinori Imarura
- 👤 Hirokazu Matsubara
- 👤 Shinkichi Horigome
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 09:40
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70216; G03F7/70691; G03F7/707; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08235
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
83 words
An electrophotographic member having a support (1) and a photoconductive layer (2) of amorphous silicon (as herein defined) containing hydrogen carried by said support, characterized in that: the distance between (a) the region at which the intensity of light illuminating said photoconductive layer (2) on the light incident side thereof is reduced by absorption therein to 1% of the intensit at ..incidence and (b) the surface of said photoconductive layer opposite to said light incidence side thereof is not more than 5 µm.
Claim 2
Dependent Claim
83 words
An electrophotographic member having a support (1) and a photoconductive layer (2) of amorphous silicon (as herein defined) containing hydrogen carried by said support, characterized in that: the distance between (a) the region at which the intensity of light illuminating said photoconductive layer (2) on the light incident side thereof is reduced by absorption therein to 1% of the intensit at ..incidence and (b) the surface of said photoconductive layer opposite to said light incidence side thereof is not more than 5 µm.
Claim 3
Dependent Claim
64 words
An electrophotographic member according to claim 1 wherein a first surface region (25) which is at least 10 nm thick and extends .inwardly of said amorphous silicon layer (2) from a first surface thereof is made of amorphous silicon (as herein defined) which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10 10 Ω.cm Ω.cm.
Claim 4
Dependent Claim
57 words
An electrophotographic member according to claim 2, wherein within said amorphous silicon layer (2) beyond the said surface region (25) thereof and at a depth of at least 10 nm from-said-first surface is an inner region (24) of amorphous silicon (as herein defined) whose optical forbidden band gap is smaller than that of said surface region (25).
Claim 5
Dependent Claim
67 words
An electrophotoggrphic member according to claim 3, wherein there is a second surface region (23) of said amorphous silicon layer (2) opposite to said first surface thereof made of amorphous silicon (as herein defined) which has an optical forbidden band gap which is at least 1.6 eV and is greater than that of said inner region (24), and a resistivity of at least 10 10 Ω .cm.
Claim 6
Dependent Claim
44 words
An electrophotographic member according to claim 3 or claim 4 wherein the face of said inner region (24) closer to said surface of the layer (2) opposite said light incident side is at most 5µm distant from said surface opposite said light incident side.
Claim 7
Dependent Claim
28 words
An electrophotographic member according to any one of claims 1 to 4 wherein said amorphous silicon layer (2) is formed by reactive sputtering in an atmosphere containing hydrogen.
Claim 8
Dependent Claim
26 words
An electrophotographic member according to. any one of claims 1 to 5 wherein said amorphous silicon layer (2) contains at least one of germanium and carbon.
Claim 9
Dependent Claim
31 words
An electrophotographic system including at least .one electrophotographic member according to any one of the preceding claims and a light source adapted to illuminate light incident side of the electrophotographic member.
Claim 10
Independent Claim
93 words
A method of operating an electrophotographic member having a support (1), and a photoconductive layer (2) of amorphous silicon (as herein defined) containing hydrogen carried by said support, characterized in that: the incident light is selected so that the distance between (a) the region at which the intensity of light illuminating said photoconductive layer (2) on the light incident side thereof is reduced by absorption therein to 1% of the intensity at incidence and (b) the surface of said photoconductive layer opposite to said light incidence side thereof is not more than 5pm.
Claim 11
Independent Claim
93 words
A method of operating an electrophotographic member having a support (1), and a photoconductive layer (2) of amorphous silicon (as herein defined) containing hydrogen carried by said support, characterized in that: the incident light is selected so that the distance between (a) the region at which the intensity of light illuminating said photoconductive layer (2) on the light incident side thereof is reduced by absorption therein to 1% of the intensity at incidence and (b) the surface of said photoconductive layer opposite to said light incidence side thereof is not more than 5pm.
References Cited (Backward Citations)
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