EP0037040A2
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EP
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Method of manufacturing a semiconductor device
Assignee: VLSI Technology Research Association
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Filing: 1981-03-20
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Granted: —
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Expires: 2001-03-20
Abstract
Abstract A method of manufacturing a semiconductor device using an improved lift-off method comprising forming a selectively-removed insulating film (110) on a main surface of a semiconductor substrate (101), depositing a glass layer (113) on the insulating film (110), coating a desired portion of the glass layer (113) with a resist film (114), over-etching the glass layer (113) to make the resist film overhung using the resist film (114) as a mask, forming a conductive layer (116a, 116b) on the whole surface thereof, and removing the resist film (114) by etching and lifting-off the portions of the conductive layer (116a) on the resist film (114) to thereby form an interconnection electrode.
Inventors
- 👤 Atsuhiko Menjo
- 👤 Satoshi Shinozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 13:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10P; H10P76/00; H10P76/20; H10P76/202; H10W20/031; H10W20/056; H10W20/058
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
130 words
A method of manufacturing a semiconductor device comprising forming a selectively removed insulating film (110) on the main surface of a semiconductor substrate (101), depositing a glass layer (113) on the insulating film (110), the glass layer (113) having multi-layer structure consisting of at least two layers and in which etching rate becomes higher as it goes to the upper portion, coating a desired portion of the glass layer (113) with a resist film (114), over-etching the glass layer (113) to make the resist film overhung using the resist film (114) as mask, forming a conductive layer (116a, 116b) on the whole surface thereof, and removing the resist film (114) and lifting-off the portions of the conductive layer (116a) on the resist film (114) to thereby form an interconnection electrode.
Claim 2
Independent Claim
130 words
A method of manufacturing a semiconductor device comprising forming a selectively removed insulating film (110) on the main surface of a semiconductor substrate (101), depositing a glass layer (113) on the insulating film (110), the glass layer (113) having multi-layer structure consisting of at least two layers and in which etching rate becomes higher as it goes to the upper portion, coating a desired portion of the glass layer (113) with a resist film (114), over-etching the glass layer (113) to make the resist film overhung using the resist film (114) as mask, forming a conductive layer (116a, 116b) on the whole surface thereof, and removing the resist film (114) and lifting-off the portions of the conductive layer (116a) on the resist film (114) to thereby form an interconnection electrode.
Claim 3
Dependent Claim
21 words
A method of manufacturing a semiconductor device according to claim 1 wherein the glass layer .(113) is made of impurity-added glass.
Claim 4
Dependent Claim
37 words
A method of manufacturing a semiconductor device according to claim 2 wherein the glass is one or more kinds of glass selected from a group consisting of phospho silicate glass, arseno silicate glass and boro silicate glass.
Claim 5
Independent Claim
31 words
A method of manufacturing a semiconductor device according to any of claims 1 through 3 wherein etching of the glass layer (113) is carried out combining anisotropic etching with isotropic etching.
Claim 6
Dependent Claim
27 words
A method of manufacturing a semiconductor device according to claim 4 wherein the anisotropic etching is of reactive ion type, and the isotropic etching of wet type.
Claim 7
Independent Claim
26 words
A method of manufacturing a semiconductor device according to any of claims 1 through 3 wherein the glass layer (113) is thicker than the conductive layer.
Claim 8
Dependent Claim
38 words
A method of manufacturing a semiconductor device according to claim 2 or 3 further including a step of depositing a thin no-impurity-added glass layer (112) on the insulating film (110) prior to deposition of the glass layer (113).
Claim 9
Independent Claim
62 words
A method of manufacturing a semiconductor device according to any of claims 1 through 3 further including a step of gettering which comprises exposing the thus formed substrate in an atmosphere containing POCl 3 of high temperature after deposition of the glass layer (113), and a step of removing the surface portions of the glass layer by etching after the gettering step.
Claim 10
Dependent Claim
27 words
A method of manufacturing a semiconductor device according to claim 8 wherein etching of the glass layer (113) is carried out combining anisotropic etching with isotropic etching.
Claim 11
Dependent Claim
27 words
A method of manufacturing a semiconductor device according to claim 9 wherein the anisotropic etching is of reaction ion type, and the isotropic etching of wet type.
Claim 12
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 8 wherein the glass layer (113) is thicker than the conductive layer (116a, 116b).
Claim 13
Dependent Claim
37 words
A method of manufacturing a semiconductor device according to claim 8 further including a step of depositing a thin no-impurity-added glass layer (112) on the insulating film (110) prior to deposition of the impurity-added glass layer (113).
References Cited (Backward Citations)
No citation records indexed.
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