EP0036764A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A semiconductor device with a V-groove insulating isolation structure and a method of manufacturing such a device
Assignee: Fujitsu Ltd
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Filing: 1981-03-19
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Granted: —
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Expires: 2001-03-19
Abstract
Abstract In the V-groove (17) insulating isolation structure an insulating film 18 is formed on the surtaceof the groove 17 and the groove is filled with polycrystal semiconductor 19. A single crystal region 23 is formed at the surface of the polycrystal semiconductor 19 by selective annealing, by an energy beam such as a laser beam L. <??>Selected impurity material may be ion implanted into the polycrystal semiconductor 19 before annealing. <??>The single crystal region 23 provides a conductive path for interconnection of device element electrodes.
Inventors
- 👤 Takeshi Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 11:23
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W20/40; H10W20/49
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
52 words
A semiconductor device having a V-groove insulating isolation structure, in which an insulating film is formed on the surface of the groove and the groove is filled with polycrystal semiconductor, characterised in that a single crystal semiconductor region is formed in the polycrystal semiconductor, for forming a conductive path in the groove.
Claim 2
Dependent Claim
52 words
A semiconductor device having a V-groove insulating isolation structure, in which an insulating film is formed on the surface of the groove and the groove is filled with polycrystal semiconductor, characterised in that a single crystal semiconductor region is formed in the polycrystal semiconductor, for forming a conductive path in the groove.
Claim 3
Dependent Claim
18 words
A semiconductor device as claimed in claim 1, wherein the single crystal semiconductor region is formed by annealing.
Claim 4
Dependent Claim
97 words
A semiconductor device as claimed in claim 1 or 2, comprising a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type, opposite to the first conductivity type, the semiconductor layer being formed on the semiconductor substrate, the V-groove penetrating through the semiconductor layer and reaching into the semiconductor substrate, and a single crystal semiconductor region formed at a surface portion of the polycrystal semiconductor for forming an interconnecting path between device elements formed in the semiconductor layer, and a metal wiring layer formed in contact with the single crystal semiconductor region.
Claim 5
Dependent Claim
20 words
A semiconductor device as claimed in claim 1, 2 or 3, wherein the polycrystal semiconductor has a high specific resistance.
Claim 6
Dependent Claim
65 words
A semiconductor device as claimed in claim 1, 2, 3 or 4, wherein the single-crystal semiconductor region has a first region of one conductivity type and a second region of the other conductivity type, forming a PN junction therebetween, the first region being formed in the second region and forming the said conductive path, the second region'electrically isolating the first region from the polycrystal silicon.
Claim 7
Independent Claim
54 words
A method of manufacturing a semiconductor device having a V-groove insulating isolation structure, in which an insulating film is formed on the surface of the groove and the groove is filled with polycrystal semiconductor, characterised by forming a single crystal semiconductor region in the polycrystal semiconductor, for forming a conductive path in the groove.
Claim 8
Independent Claim
54 words
A method of manufacturing a semiconductor device having a V-groove insulating isolation structure, in which an insulating film is formed on the surface of the groove and the groove is filled with polycrystal semiconductor, characterised by forming a single crystal semiconductor region in the polycrystal semiconductor, for forming a conductive path in the groove.
Claim 9
Dependent Claim
17 words
A method as claimed in claim 6, wherein the single crystal semiconductor region is formed by annealing.
Claim 10
Dependent Claim
86 words
A method as claimed in claim 6 or 7, comprising: preparing a semiconductor substrate of a first conductivity type, having thereon a semiconductor layer of a second conductivity type, opposite to the first conductivity type, forming the V-groove to penetrate through the semiconductor layer into the substrate, and irradiating a surface portion of the polycrystal semiconductor with an energy beam to convert that surface portion to the single crystal semiconductor region for forming an interconnecting path between device elements to be formed in the semiconductor layer.
Claim 11
Dependent Claim
15 words
A method as claimed in claim 8, wherein the energy beam is a laser beam.
Claim 12
Dependent Claim
30 words
A method as claimed in claim 8 or 9, further comprising implanting impurity ions into the polycrystal semiconductor at the said surface portion thereof, before irradiation with the energy beam.
References Cited (Backward Citations)
No citation records indexed.
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