EP0035690A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device using component insulation and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1981-02-24
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Granted: —
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Expires: 2001-02-24
Abstract
Abstract A method for element isolation utilizing insulating materials (6) in a semiconductor substrate (1) is proposed. This method is characterized in that an oxidizable material layer (3) of polycrystalline silicon or the like is formed, the oxidizable material layer (3) disposed at the element-isolationforming regions is oxidized using an oxidation mask (4), the oxidation mask (4) is removed and, if necessary at least part of the unoxidized oxidizable material (3) below the mask (4) is removed. Predetermined processes such as oxidation and diffusion are performed thereafter to form semiconductor elements such as MOS transistors and bipolar transistors with high packaging density and reliability.
Inventors
- 👤 Hiroshi Nozawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 21:18
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0142; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P76/00; H10P76/40; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
68 words
A method for manufacturing a semiconductor device employing element isolation by forming insulating materials in a semiconductor substrate, said method comprising the steps of: forming an oxidizable material layer on the semiconductor substrate; partially forming an oxidation mask on said oxidizable material layer; oxidizing at least part of said oxidizable material layer not covered with said oxidation mask for forming an oxide layer; and removing said oxidation mask.
Claim 2
Independent Claim
68 words
A method for manufacturing a semiconductor device employing element isolation by forming insulating materials in a semiconductor substrate, said method comprising the steps of: forming an oxidizable material layer on the semiconductor substrate; partially forming an oxidation mask on said oxidizable material layer; oxidizing at least part of said oxidizable material layer not covered with said oxidation mask for forming an oxide layer; and removing said oxidation mask.
Claim 3
Dependent Claim
36 words
A method according to claim 1, wherein a step of doping an impurity into an oxide layer-forming region of said semiconductor substrate is performed before the step of forming an oxide layer of an oxidizable material.
Claim 4
Dependent Claim
19 words
A method.according to claim 1, wherein an oxide layer is interposed between said semiconductor substrate and said oxidizable material.
Claim 5
Dependent Claim
15 words
A method according to claim 1, wherein said oxidation mask is made of silicon nitride.
Claim 6
Dependent Claim
40 words
A method according to claim 1, wherein the step of removing an oxidation mask includes a step of removing at least part of said oxidizable material layer below said oxidation mask for partially exposing the surface of said semiconductor substrate.
Claim 7
Dependent Claim
70 words
A method according to claim 1, wherein a step of doping an impurity into an oxide layer-forming region of said semiconductor substrate is performed before the step of forming an oxide layer of an oxidizable material; and the step of removing an oxidation mask includes a step of removing at least part of said oxidizable material layer below said oxidation mask for partially exposing the surface of said semiconductor substrate.
Claim 8
Dependent Claim
17 words
A method according to claim 1, wherein said oxide layer is used as an element isolation layer.
Claim 9
Dependent Claim
27 words
A method according to claim 2, wherein a photoresist for forming said oxidation mask is used as the doping mask in the step of doping the impurity.
Claim 10
Dependent Claim
20 words
A method according to claim 8, wherein the area of said oxidation mask is larger than that of said photoresist.
Claim 11
Dependent Claim
37 words
A method according to claim 1, wherein the step of forming an oxide layer of said oxidizable material comprises forming an oxide layer as an upper layer and forming an unoxidized shield layer as a lower layer.
Claim 12
Independent Claim
17 words
A method according to any of claims 1 to 10, wherein said oxidizable material is noncrystalline silicon.
Claim 13
Independent Claim
24 words
A method according to any of claims 1 to 10, wherein said oxidizable material is a material which oxidizes faster than said semiconductor substrate.
Claim 14
Dependent Claim
39 words
A method according to claim 12, wherein said material which is oxidized faster than said semiconductor substrate is at least one member selected from the group consisting of polycrystalline silicon of high impurity concentration, molybdenum silicide, and tungsten silicide.
Claim 15
Dependent Claim
61 words
A semiconductor device having a semiconductor substrate, a conductive layer including a shield layer formed over part of the surface of said substrate with a first insulation layer interposed therebetween, a second insulation layer formed on said conductive layer, and an active region formed in said semiconductor substrate at a place other than immsdiately below said shield layer, characterized in that,
Claim 16
Dependent Claim
61 words
A semiconductor device having a semiconductor substrate, a conductive layer including a shield layer formed over part of the surface of said substrate with a first insulation layer interposed therebetween, a second insulation layer formed on said conductive layer, and an active region formed in said semiconductor substrate at a place other than immsdiately below said shield layer, characterized in that,
Claim 17
Dependent Claim
60 words
said conductive layer comprises a thick oxidizable conductive layer and a thin oxidizable conductive layer which corresponds in position to said shield layer; and said second insulation layer comprises a. thin second insulation layer formed on said thick oxidizable conductive layer and a thick second insulation layer formed on said thin oxidizable conductive layer by oxidation of said oxidizable layer.
Claim 18
Dependent Claim
60 words
said conductive layer comprises a thick oxidizable conductive layer and a thin oxidizable conductive layer which corresponds in position to said shield layer; and said second insulation layer comprises a. thin second insulation layer formed on said thick oxidizable conductive layer and a thick second insulation layer formed on said thin oxidizable conductive layer by oxidation of said oxidizable layer.
Claim 19
Dependent Claim
34 words
A device according to claim 14, wherein a layer of high impurity concentration of the same conductivity type as that.of said substrate is formed in said substrate immediately below said thin oxidizable conductive layer.
Claim 20
Dependent Claim
16 words
A device according to claim 14, wherein said oxidizable conductive layers are made. of non-monocrystalline silicon.
Claim 21
Dependent Claim
23 words
A device according to claim 14, wherein said oxidizable conductive layers are made of a material which oxidizes faster than said semiconductor substrate.
Claim 22
Dependent Claim
96 words
A semiconductor device having a semiconductor substrate of first conductivity type, a source region and a drain region of second conductivity type formed in said semiconductor substrate, a conductive layer formed on said semiconductor substrate with an insulation layer interposed therebetween, and a field insulation layer formed on said semiconductor substrate at a place other than an element-forming region of said semiconductor substrate, characterized in that said field insulation layer is formed by partial oxidation of said conductive layer, and the unoxidized part of said conductive layer terminates at the edge of said field insulation layer.
Claim 23
Dependent Claim
96 words
A semiconductor device having a semiconductor substrate of first conductivity type, a source region and a drain region of second conductivity type formed in said semiconductor substrate, a conductive layer formed on said semiconductor substrate with an insulation layer interposed therebetween, and a field insulation layer formed on said semiconductor substrate at a place other than an element-forming region of said semiconductor substrate, characterized in that said field insulation layer is formed by partial oxidation of said conductive layer, and the unoxidized part of said conductive layer terminates at the edge of said field insulation layer.
Claim 24
Dependent Claim
39 words
A semiconductor device having oxide regions formed in a semiconductor substrate as element isolation regions, characterized in that said oxide regions are formed by oxidizing at least of an oxidizable material layer formed in advance on said semiconductor substrate.
Claim 25
Dependent Claim
39 words
A semiconductor device having oxide regions formed in a semiconductor substrate as element isolation regions, characterized in that said oxide regions are formed by oxidizing at least of an oxidizable material layer formed in advance on said semiconductor substrate.
References Cited (Backward Citations)
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