Monolithic integrated device with two Hall elements

Abstract

Abstract 1. A monolithically integrated arrangement of two Hall probes which are produced on a common flat part of the surface of a doped monocrystalline silicon chip, wherein each of the two Hall probes is provided by a semiconductor region of n-conductivity type and two electrodes which contact the respective semiconductor region in a non-blocking manner, and wherein the two Hall probes are separated from one another by a region of p-conductivity type, and wherein, in addition, the electrode pairs of the two Hall probes are so arranged relative to one another that the currents flowing in the two Hall probes are orientated at right angles to one another, characterized in that the semiconductor surface (26) on which the Hall probes are produced, coincides with a (100) plane of the silicon lattice.

Inventors

• 👤 Günter Dr. Dipl.-Phys. von Häfen
• 👤 Herbert F. Dr. Dipl.-Phys. Roloff

Bibliographic Details