EP0033137A2
Expired / Lapsed
EP
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Semiconductor laser device
Assignee: Hitachi Ltd
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Filing: 1981-01-22
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Granted: —
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Expires: 2001-01-22
Abstract
Abstract A semiconductor laser device comprises a semiconductor assembly which serves to effect laser oscillation and in which first, second and third semiconductor layers (2,3,4) are successively stacked on a predetermined semiconductor body (1), at least the first and third semiconductor layers (2,4) having a smaller refractive index and a greater forbidden band gap relative than the second semiconductor layer (3) and having conductivity types opposite to each other, and means (6, 8) to spread depletion regions within at least a part of a current path for effecting the laser oscillation and in a manner to intersect with the current path. A small-sized semiconductor laser device capable of fast modulation can be realized.
Inventors
- 👤 Tadashi Fukuzawa
- 👤 Michiharu Nakamura
- 👤 Susumu Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 23:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06203; H01S5/20; H01S5/22; H01S5/227; H10; H10H; H10H29/00; H10H29/10; H01S5/06209; H01S5/0622; H01S5/2275
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
151 words
A semiconductor laser device comprising a semiconductor assembly for effecting laser oscillation in which at least first, second and third semiconductor layers (2, 3, 4) are successively stacked on a predetermined semiconductor body (1), said first and third semiconductor layers (2, 4) having a smaller refractive index and a greater forbidden band gap than said second semiconductor layer (3) and having conductivity types opposite to each other, and current injection means for the laser oscillation including a first electrode (9) desposed on a crystal surface of said semiconductor assembly remote from said semiconductor body (1), and a second electrode (11) disposed on a surface of said semiconductor body (1) opposing to said first electrode (2), characterized by means (6, 8) for spreading depletion regions within a path of current of said current injection means in a manner to intersect with the current path, and an optical resonator for the laser oscillation.
Claim 2
Dependent Claim
151 words
A semiconductor laser device comprising a semiconductor assembly for effecting laser oscillation in which at least first, second and third semiconductor layers (2, 3, 4) are successively stacked on a predetermined semiconductor body (1), said first and third semiconductor layers (2, 4) having a smaller refractive index and a greater forbidden band gap than said second semiconductor layer (3) and having conductivity types opposite to each other, and current injection means for the laser oscillation including a first electrode (9) desposed on a crystal surface of said semiconductor assembly remote from said semiconductor body (1), and a second electrode (11) disposed on a surface of said semiconductor body (1) opposing to said first electrode (2), characterized by means (6, 8) for spreading depletion regions within a path of current of said current injection means in a manner to intersect with the current path, and an optical resonator for the laser oscillation.
Claim 3
Dependent Claim
53 words
The semiconductor laser device of claim 1, characterized in that said means for spreading the depletion regions within said current path includes impurity regions (6) which are formed at a predetermined interval in said semiconductor assembly for effecting the laser oscillation, and electrodes (8) which are electrically connected to said impurity regions (6).
Claim 4
Dependent Claim
67 words
3 . The semiconductor laser device of claim 1, characterized in that said means for spreading the depletion regions within said current path includes impurity regions (47) which are formed at a predetermined interval in a semiconductor layer (45) disposed above said second semiconductor layer (43) of said semiconductor assembly for effecting the laser oscillation, and electrodes (49) which are electrically connected to said impurity regions (47).
Claim 5
Dependent Claim
65 words
The semiconductor laser device of claim 1, characterized in that said means for spreading the depletion regions within said current path includes' impurity regions (88) which are formed at a predetermined interval in a semiconductor layer (81) disposed below said second semiconductor layer (84) of said semiconductor assembly for effecting the laser oscillation, and electrodes (91) which are electrically connected to said impurity regions (88).
Claim 6
Dependent Claim
49 words
The semiconductor laser device of claim 1, characterized in that said means for spreading the depletion regions within said current path includes impurity regions (17) which are formed at a predetermined interval in said semiconductor body (14), and electrodes (24) which are electrically connected to said impurity regions (17).
References Cited (Backward Citations)
No citation records indexed.
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