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EP0032588A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Substrate bias generation circuit

Assignee: Toshiba Corp
•
Filing: 1980-12-23
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Granted: —
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Expires: 2000-12-23
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Abstract

Abstract Disclosed is a substrate bias generator circuit which comprises an oscillator circuit (10), a driving circuit (20) producing a rectangular-wave signal in accordance with an oscillation output signal from the oscillator circuit (10), and a charge pump circuit (30) pumping electric charges into a substrate in accordance with the rectangular-wave output signal from the driving circuit (20). The oscillator circuit (10) is a voltage-controlled oscillator circuit whose oscillation frequency is controlled in accordance with a substrate bias voltage from the charge pump circuit (30).

Inventors

  • 👤 Akira C/O Prof. Edward J. Mccluskey Kanuma

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-29 12:59
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 79 words
A substrate bias generation circuit comprising an oscillator circuit (10), a driving circuit (20) producing a driving signal in accordance with an oscillation output signal from said oscillator circuit (10), and a charge pump circuit (30) producing a substrate bias voltage in accordance with the driving signal from said driving circuit (20), characterized in that said oscillator circuit.(10) is a voltage-controlled oscillator circuit whose oscillation frequency is variable with the substrate bias voltage from said charge pump circuit (30).
Claim 2
Dependent Claim 79 words
A substrate bias generation circuit comprising an oscillator circuit (10), a driving circuit (20) producing a driving signal in accordance with an oscillation output signal from said oscillator circuit (10), and a charge pump circuit (30) producing a substrate bias voltage in accordance with the driving signal from said driving circuit (20), characterized in that said oscillator circuit.(10) is a voltage-controlled oscillator circuit whose oscillation frequency is variable with the substrate bias voltage from said charge pump circuit (30).
Claim 3
Dependent Claim 53 words
A substrate bias generation circuit according to claim 1, characterized in that said voltage-controlled oscillator circuit (10) is a ring oscillator circuit composed of an odd number of inverter means each having a delay function with the delay time changed in accordance with the substrate bias voltage from said charge pump circuit (30).
Claim 4
Dependent Claim 56 words
A substrate bias generation circuit according to claim 2, characterized in that each of said inverter means includes an inverter circuit (11, 12, 13) and a delay circuit (14 to 19) coupled in series with said inverter circuit and having its delay time changed in accordance with the substrate bias voltage from said charge pump circuit.
Claim 5
Dependent Claim 55 words
A substrate bias generation circuit according to claim 3, characterized in that said delay circuit (14 to 19) includes a delay MOS transistor (1'4, 16, 18) to receive at its gate the substrate bias voltage from said charge pump circuit (30) and a capacitor (15, 17, 19) coupled in series with said delay MOS transistor.
Claim 6
Dependent Claim 56 words
A substrate bias generation circuit according to claim 2, characterized in that each of said inverter means includes a series circuit of resistive means and an MOS transistor, a switching MOS transistor coupled with said series circuit, and a capacitor (15, 17, 19) coupled with a junction between said series circuit and said switching MOS transistor.
Claim 7
Dependent Claim 97 words
A substrate bias generation circuit according to claim 1, characterized in that said voltage-controlled oscillator circuit (10) is a ring oscillator circuit composed of an odd number of circuit units each provided with input and output terminals, a series circuit which includes an MOS transistor (114, 116, 118) to receive at its gate the substrate bias voltage from said charge pump circuit (30) and resistive means and has one end coupled with said output terminal, and a switching MOS transistor having its gate coupled with said input terminal and its current path coupled with said output terminal.
Claim 8
Dependent Claim 84 words
A substrate bias generation circuit according to claim 1, characterized in that said voltage-controlled oscillator circuit (10) is a ring oscillator circuit composed of an odd number of circuit units each provided with an MOS inverter (11, 12, 13) formed of resistive means and a switching MOS transistor, and an MOS transistor (14, 16, 18) having its current path coupled in series with said MOS inverter (11, 12, 13) and receiving at its gate the substrate bias voltage from said charge pump circuit (30).
Claim 9
Dependent Claim 62 words
A substrate bias generation circuit according to claim 1, characterized in that said voltage-controlled oscillator circuit (10) includes an inverter circuit (11, 12, 13) and a delay circuit (14 to 19) coupled between input and output terminals of said inverter circuit (11, 12, 13) and having its delay time variable in accordance with the substrate bias voltage from said charge pump circuit,
Claim 10
Dependent Claim 56 words
A substrate bias generation circuit according to claim 8, characterized in that said delay circuit (14 to 19) includes a delay MOS transistor (14, 16, 18) to receive at its gate the substrate bias voltage from said charge pump circuit (30) and a capacitor . (15, 17, 19) coupled in series with said delay MOS transistor.
Claim 11
Dependent Claim 68 words
A substrate bias generation circuit according to claim 1, characterized in that said voltage-controlled oscillator circuit (10) includes a series circuit of resistive means and an MOS transistor (114, 116, 118), a switching MOS transistor having its gate and one end of its current path coupled with said series circuit, and a capacitor (15, 17, 19) coupled in parallel with the current path of said switching MOS transistor.

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