EP0032030A2
Expired / Lapsed
EP
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A semiconductor device and a method of manufacturing a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1980-12-19
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Granted: —
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Expires: 2000-12-19
Abstract
Abstract An insulator layer 2 is provided over the surface of a P type semiconductor substrate. A P type semiconductor region 4 is provided below the insulator layer and functions as one electrode of a capacitor of the device. A relatively heavily doped N-type region 5 is provided below the P-type region 4. A conductive layer 9 is provided over the insulating layer over the heavily doped P-type region 4, and functions as another electrode of the capacitor of the device and extends into a field region to provide a field shield layer. The capacitor may be a capacitor of a 1-transistor, 1-capacitor memory cell, in which case the heavily doped P-type region 5 and the conductive layer 9 do not extend to a gate region of a transfer gate transistor of the memory cell.
Inventors
- 👤 Motoo Nakano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 05:31
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B12/00; H10B12/30
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
101 words
A semiconductor device, comprising a substrate of one conductivity type, an insulator layer on the surface of the substrate, a first semiconductor region, of the opposite conductivity type to that of the substrate, beneath the insulator layer, providing one electrode of a capacitor of the device, a second semiconductor region, of the same conductivity type as the substrate, beneath the first semiconductor region and extending into a field region, a conductive layer, above the insulator layer, over the first and second semiconductor regions, providing another electrode of the said capacitor, and across the insulator layer to provide a field shield electrode.
Claim 2
Dependent Claim
101 words
A semiconductor device, comprising a substrate of one conductivity type, an insulator layer on the surface of the substrate, a first semiconductor region, of the opposite conductivity type to that of the substrate, beneath the insulator layer, providing one electrode of a capacitor of the device, a second semiconductor region, of the same conductivity type as the substrate, beneath the first semiconductor region and extending into a field region, a conductive layer, above the insulator layer, over the first and second semiconductor regions, providing another electrode of the said capacitor, and across the insulator layer to provide a field shield electrode.
Claim 3
Dependent Claim
28 words
A device as claimed in claim 1, wherein the insulator layer does not cover a part of the surface of the substrate to be contacted by metal wiring.
Claim 4
Dependent Claim
34 words
A device as claimed in claim 1 or 2, wherein the first and second semicondudtor regions are thin regions, and the second semiconductor region is relatively heavily doped (e.g. has a relatively high conductivity).
Claim 5
Dependent Claim
53 words
A device as claimed in claim 1, 2 or 3, wherein the conductive layer has a pattern identical to that of the second semiconductor region at least at one part of the contour thereof (e.g. the conductive layer has at least some boundaries which are contiguous with boundaries of the second semiconductor region).
Claim 6
Independent Claim
17 words
A device as claimed in any preceding claim, wherein the first semiconductor region is relatively heavily doped.
Claim 7
Independent Claim
37 words
A device as claimed in any preceding claim, wherein the first semiconductor region, provides also a source of a transfer gate transistor, and the said conductive layer does not extend towards the gate region of that transistor.
Claim 8
Dependent Claim
20 words
A device as claimed in claim 6, wherein the second semiconductor region does not extend towards the said gate region.
Claim 9
Independent Claim
13 words
A device as claimed in any preceding claim, being a semiconductor memory device.
Claim 10
Independent Claim
21 words
A device as claimed in any preceding claim, wherein the said capacitor is the capacitor of a 1-capacitor, 1-transistor memory cell.
Claim 11
Independent Claim
32 words
A method of manufacturing a semiconductor devide as claimed in any preceding claim, wherein a thick field oxide layer is not employed, and no long duration high temperature heat treatments are used.
References Cited (Backward Citations)
No citation records indexed.
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