EP0031671A2
Expired / Lapsed
EP
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A method of growing silicate glass layers employing a chemical vapour deposition process
Assignee: Fujitsu Ltd
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Filing: 1980-12-17
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Granted: —
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Expires: 2000-12-17
Abstract
Abstract Impurity concentration doped in PSG deposited on a plurality of semiconductor substrates 2 employing a chemical vapour deposition process depends on the flow rate of reactive gases in the neighborhood 1a of the first one of the semiconductor substrates 2 processed with the same equipment in one batch at the same time. Regulation of the flow rate of the reactive gases in the neighborhood of the first one of the semiconductor substrates processed with the same equipment in one batch at the same time is effective to make the impurity concentration doped in PSG uniform for all the semiconductor substrates processed in one batch employing the presently available sealed tube type equipment for vacuum vapour deposition process. The flow rate regulation is possible by monitoring readings of a manometer 8 which is arranged around the inlets 4, 5 of the tube and which was calibrated employing the flow rate of a nonreactive gas such as nitrogen gas.
Inventors
- 👤 Yoshimi Shioya
- 👤 Mikio Takagi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 00:03
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/44; C23C16/455; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B31/00; C30B31/02; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
112 words
A method of chemical vapour deposition for growing silicate glass layers on a plurality of semiconductor wafers, wherein the semiconductor wafers are mounted in a tube at respective intervals along the tube, the wafers being aligned transversely with respect to the tube such that they are perpendicular to, or inclined with respect to, the axis of the tube, and wherein chemical vapour deposition is carried out by causing reactive gas to flow in the tube and to make chemical reaction in the neighborhood of said semiconductor wafers thereby to deposit silicate glass thereon, characterised in that the flow rate of said reactive gas is regulated in the neighborhood of said semiconductor wafers.
Claim 2
Independent Claim
112 words
A method of chemical vapour deposition for growing silicate glass layers on a plurality of semiconductor wafers, wherein the semiconductor wafers are mounted in a tube at respective intervals along the tube, the wafers being aligned transversely with respect to the tube such that they are perpendicular to, or inclined with respect to, the axis of the tube, and wherein chemical vapour deposition is carried out by causing reactive gas to flow in the tube and to make chemical reaction in the neighborhood of said semiconductor wafers thereby to deposit silicate glass thereon, characterised in that the flow rate of said reactive gas is regulated in the neighborhood of said semiconductor wafers.
Claim 3
Dependent Claim
34 words
A method according to claim 1, wherein said tube is sealed except for one or more gas inlets and a gas outlet allowing the reactive gas to flow in and out of the tube.
Claim 4
Dependent Claim
24 words
A method according to claim 1 or 2, wherein a vacuum pump is employed to cause the reactive gas to flow along the tube.
Claim 5
Independent Claim
16 words
A method according to any one of the preceding claims, wherein a heater surrounds the tube.
Claim 6
Independent Claim
20 words
A method according to any one of the preceding claims, wherein the tube is made of quartz or stainless steel.
Claim 7
Independent Claim
23 words
A method according to any one of the preceding claims, wherein a manometer is employed to monitor the internal pressure of the tube.
Claim 8
Independent Claim
28 words
A method according to any one of the preceding claims, wherein the flow rate of the reactive gas is regulated by regulating the internal pressure of the tube.
Claim 9
Independent Claim
17 words
A method according to any one of the preceding claims, wherein said silicate glass is phospho-silicate glass.
Claim 10
Dependent Claim
36 words
A method according to claim 2 or any one of claims 3 to 8 when appended to claim 2, wherein one of said inlets is distributed along the tube in the region of the semiconductor wafers.
Claim 11
Independent Claim
34 words
A method according to any one of the preceding claims, wherein the flow rate of the reactive gas is regulated adjacent to the first one of said wafers in the direction of gas flow.
Claim 12
Independent Claim
25 words
A method according to any one of the preceding claims, wherein said flow rate is regulated to be in the range 6 to 12 m/sec.
Claim 13
Independent Claim
36 words
A method according to claims 2 and 6, or any one of claims 7 to 11 when appened thereto, wherein the manometer is arranged in the region of the inlets at one end of the tube.
Claim 14
Independent Claim
36 words
A method according to claims 6 and 7, or any one of claims 8 to 12 when appended thereto, wherein the manometer is previously calibrated to provide an indication of flow rate, employing a non-reactive gas.
References Cited (Backward Citations)
No citation records indexed.
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