EP0029987A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1980-11-24
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Granted: —
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Expires: 2000-11-24
Abstract
Abstract A bipolar transistor as operates reversely having a first conductivity type base region (9a, 9b) is formed in a second conductivity type semiconductor region (7) at its main surface side. A second conductivity type collar region (18) is formed in contact with or close to the base region (9a). The collar region (18) contains phosphorus and arsenic at high concentration, which are injected thereinto by diffusion process.
Inventors
- 👤 Yoshitaka Sasaki
- 👤 Osamu Ozawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 09:03
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/0116; H10D10/00; H10D10/40; H10D10/461; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D84/02; H10D84/03; H10D84/038; H10D84/60; H10D84/65; H10D84/658; H10W; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
109 words
A semiconductor device comprising a semiconductor region (7) of a second conductivity type; a bipola transistor as reversely operates (upside-down bipolar transistor) which is formed in said semiconductor region(7) of said second conductivity type at the main surface side thereof, and has a first conductivity type base region (9a, 9b); and a collar region (18) of the second conductivity type which is deeper than said base region (9b), contacts with or is close to said base region (9a), and extends opposite to the main surface of said second conductivity type region (7); characterized in that said collar region (18) is formed by diffusing phosphorus and arsenic at high concentration.
Claim 2
Dependent Claim
109 words
A semiconductor device comprising a semiconductor region (7) of a second conductivity type; a bipola transistor as reversely operates (upside-down bipolar transistor) which is formed in said semiconductor region(7) of said second conductivity type at the main surface side thereof, and has a first conductivity type base region (9a, 9b); and a collar region (18) of the second conductivity type which is deeper than said base region (9b), contacts with or is close to said base region (9a), and extends opposite to the main surface of said second conductivity type region (7); characterized in that said collar region (18) is formed by diffusing phosphorus and arsenic at high concentration.
Claim 3
Dependent Claim
57 words
A semiconductor device according to claim 1, characterized in that the crystalline direction of said main surface of said second conductivity type semiconductor region (7) is < 111 > and the number of atoms of arsenic contained in said collar region (18) is 3 % to 40 % of that of phosphorus contained in said collar region.
Claim 4
Dependent Claim
135 words
A semiconductor device according to claim 1, characterized in that a first conductivity type injector region (8) is further formed at said main surface side of said second conductivity type semiconductor region (7), said injector region facing said upside-down bipolar transistor with part of said second conductivity type semiconductor region (7) intervening therebetween; said upside-down bipolar transistor includes a second conductivity type collector region (12) and said base region (9a, 9b) in contact with the surfaces of said collector region other than the surface thereof coincident with said main surface of said second conductivity type semiconductor region (7); and said injector region (8), said collector region (12), said base region (9a, 9b), said second conductivity type semiconductor region (7) and said collar region (18) cooperate to form an I 2 L (integrated injection logic) gate.
Claim 5
Independent Claim
92 words
A method of fabricating a semiconductor device characterized by comprising steps of forming a bipolar transistor as operates reversely (upside-down bipolar transistor) having a first conductivity type base region (9a, 9b) in a semiconductor region (7) of a second conductivity of which the main surface has the crystalline direction of < 111 > , and forming a collar region (18), which is in contact with or is close to said base region (9a) and extends opposite to said main surface of said second conductivity type semiconductor region, by diffusing phosphorus and arsenic.
Claim 6
Independent Claim
92 words
A method of fabricating a semiconductor device characterized by comprising steps of forming a bipolar transistor as operates reversely (upside-down bipolar transistor) having a first conductivity type base region (9a, 9b) in a semiconductor region (7) of a second conductivity of which the main surface has the crystalline direction of < 111 > , and forming a collar region (18), which is in contact with or is close to said base region (9a) and extends opposite to said main surface of said second conductivity type semiconductor region, by diffusing phosphorus and arsenic.
Claim 7
Independent Claim
134 words
A method of fabricating a semiconductor device characterized by comprising steps of: forming a second conductivity type first semiconductor region (5, 7) on a main surface of a first conductivity type semiconductor substrate (1) of which the main surface has the crystalline direction of < 111 > ; forming a first conductivity type internal base region (9b) of a upside-down bipolar transistor in said first semiconductor region (5, 7), at its main surface side; forming a first conductivity type external base region (9a) enclosing the side wall of said internal base region (9b); forming a second conductivity type collector region (12) on said internal base region (9b); and forming a second conductivity type high concentration collar region (18) in contact with or close to said external base region (9a) by diffusing phosphorus and arsenic.
Claim 8
Independent Claim
134 words
A method of fabricating a semiconductor device characterized by comprising steps of: forming a second conductivity type first semiconductor region (5, 7) on a main surface of a first conductivity type semiconductor substrate (1) of which the main surface has the crystalline direction of < 111 > ; forming a first conductivity type internal base region (9b) of a upside-down bipolar transistor in said first semiconductor region (5, 7), at its main surface side; forming a first conductivity type external base region (9a) enclosing the side wall of said internal base region (9b); forming a second conductivity type collector region (12) on said internal base region (9b); and forming a second conductivity type high concentration collar region (18) in contact with or close to said external base region (9a) by diffusing phosphorus and arsenic.
References Cited (Backward Citations)
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