EP0029552A2
Expired / Lapsed
EP
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Method for producing a semiconductor device
Assignee: VLSI Technology Research Association
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Filing: 1980-11-13
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Granted: —
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Expires: 2000-11-13
Abstract
Abstract A method for producing a semiconductor device comprises the steps of selectively etching a part of a second conductivity type semiconductor layer (13) formed on a first conductivity type semiconductor substrate (11) where an isolating oxide layer (18a) is to be formed; introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part. by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer (13); thermally treating said impurity-introduced region to form a substrate contact; and thermally oxidizing said etched part to form an oxide layer (18a).
Inventors
- 👤 Shinji Saitoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 21:52
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
108 words
A method for producing a semiconductor device comprising the steps of selectively etching a part of a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate where an isolating oxide layer is to be formed, and thermally oxidizing to form an isolating oxide layer at said etched part characterized by further comprising the steps of introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part, by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer, and thermally treating said impurity-introduced part to form a substrate contact.
Claim 2
Independent Claim
108 words
A method for producing a semiconductor device comprising the steps of selectively etching a part of a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate where an isolating oxide layer is to be formed, and thermally oxidizing to form an isolating oxide layer at said etched part characterized by further comprising the steps of introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part, by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer, and thermally treating said impurity-introduced part to form a substrate contact.
Claim 3
Dependent Claim
82 words
A method as claimed in claim 1, wherein said step of selectively etching away the part of said second conductivity type semiconductor layer where the isolating oxide layer is to be formed comprises covering said second conductivity type semiconductor layer with an oxidation resisting material layer, selectively etching away the part of said oxidation resisting material layer corresponding to said isolating oxide layer, and etching away said second conductivity type semiconductor layer using the remaining oxidation resisting material layer as a mask.
Claim 4
Dependent Claim
63 words
A method as claimed in claim 1 or 2, wherein said first conductivity type impurity is selectively introduced in an area reaching from the bottom of said etched part for the element isolation region and the bottom of said etched part for the substrate contact region to the side surface thereof and to the top surface of said second conductivity type semiconductor layer.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 2, wherein said oxidation resisting material is silicon nitride.
Claim 6
Dependent Claim
21 words
A method as claimed in claim 4, wherein the introduction of said first conductivity type impurity is performed by ion implantation.
Claim 7
Dependent Claim
42 words
A method as claimed in claim 1 or 2, further comprising the step of forming a first conductivity type impurity region to connect with said substrate contact in an area adjacent to said isolating oxide layer after forming said isolating oxide layer.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 1, wherein said semiconductor device is a bipolar semiconductor device.
Claim 9
Dependent Claim
16 words
A method as claimed in claim 7, wherein said semiconductor device is a substrate pnp transistor.
References Cited (Backward Citations)
No citation records indexed.
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