EP0024916A2
Expired / Lapsed
EP
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Improved positive-working resist materials and their use in a formation of a negative resist pattern on a substrate
Assignee: Fujitsu Ltd
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Filing: 1980-08-27
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Granted: —
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Expires: 2000-08-27
Abstract
Abstract An improved positive-working resist material capable of forming on a substrate either a positive resist pattern or a negative resist pattern is disclosed. The positive-working resist material comprises a positive-working resist resin having incorporated therein one or more photochromic compounds, such as spiropyrans, triphenylmethane dyes, anils and the like. A positive or negative resist pattern having a remarkably improved definition can be obtained. The use of such a positive-working resist material in the formation of a negative resist pattern on the substrate is also disclosed.
Inventors
- 👤 Tsunehiro Chonan
- 👤 Akira Morishige
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 11:34
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/105; G03F7/20; G03F7/2022; Y; Y10; Y10S; Y10S430/00; Y10S430/163
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
34 words
A positive-working resist material capable of forming on a substrate either a positive resist pattern or a negative resist pattern which comprises a positive--working resist resin having incorporated therein one or more photochromic compounds.
Claim 2
Dependent Claim
34 words
A positive-working resist material capable of forming on a substrate either a positive resist pattern or a negative resist pattern which comprises a positive--working resist resin having incorporated therein one or more photochromic compounds.
Claim 3
Dependent Claim
35 words
A positive-working resist material according to Claim 1, wherein said photochromic compound is a compound selected from the group consisting of; (1) trans-cis type compounds; (2) ion-forming type compounds, and; (3) hydrogen transfer type compounds.
Claim 4
Dependent Claim
17 words
A positive-working resist material according to Claim 2, wherein said trans-cis type compounds are azobenzenes and thioindigos.
Claim 5
Dependent Claim
17 words
A positive-working resist material according to Claim 2, wherein said ion-forming type compounds are spiropyrans and triphenylmethanes.
Claim 6
Dependent Claim
19 words
A positive-working resist material according to Claim 2, wherein said hydrogen transfer type compounds are o-nitrobenzyl derivatives and anils.
Claim 7
Dependent Claim
44 words
- 6. A positive-working resist material according to Claim 1, wherein said photochromic compound is incorporated into the positive-working resist resin in an amount of 1 through 4 parts by weight of said photochromic compound per 100 parts by weight of the resist resin.
Claim 8
Dependent Claim
25 words
A positive-working resist material according to Claim 1, wherein said positive-working resist resin is selected from the group consisting of naphotoquinonediazide photoresists and benzoquinonediazide photoresists.
Claim 9
Dependent Claim
96 words
A process for the formation of a negative resist pattern on a substrate which comprises the steps of: (1) coating on the substrate a positive-working resist material which comprises a positive-working resist having incorporated therein one or more photochromic compounds; (2) exposing the coated resist material to a desired pattern of radiation; (3) heating the exposed resist material at a temperature of from 95 to 150°C for 5 through 60 minutes; (4) subjecting the heated resist material to a blanket exposure, and; (5) developing the exposed resist material with an alkaline developer for the positive resists.
Claim 10
Dependent Claim
96 words
A process for the formation of a negative resist pattern on a substrate which comprises the steps of: (1) coating on the substrate a positive-working resist material which comprises a positive-working resist having incorporated therein one or more photochromic compounds; (2) exposing the coated resist material to a desired pattern of radiation; (3) heating the exposed resist material at a temperature of from 95 to 150°C for 5 through 60 minutes; (4) subjecting the heated resist material to a blanket exposure, and; (5) developing the exposed resist material with an alkaline developer for the positive resists.
Claim 11
Dependent Claim
24 words
A process according to Claim 8, further comprising the step of prebaking the coated resist material before exposure to a desired pattern of radiation.
Claim 12
Dependent Claim
24 words
A process according to Claim 9, wherein prebaking is carried out at a temperature of from 50 to l10°C for 5 through 30 minutes.
Claim 13
Dependent Claim
33 words
A process according to Claim 8, wherein said photochromic compound is a member selected from the group consisting of: (1) trans-cis type compounds; (2) ion-forming type compounds, and; (3) hydrogen transfer type compounds.
Claim 14
Dependent Claim
15 words
A process according to Claim 11, wherein said trans-cis type compounds are azobenzenes or thioindigos.
Claim 15
Dependent Claim
17 words
- 13. A process according to Claim 11, wherein said ion-forming type compounds are spiropyrans or triphenylmethanes.
Claim 16
Dependent Claim
17 words
A process according to Claim 11, wherein said hydrogen transfer type compounds are o-nitrobenzene derivatives or anils.
Claim 17
Dependent Claim
45 words
A process according to Claim 8, 11, 12, 13 or 14, wherein said photochromic compound is incorporated into the positive-working resist resin in an amount of 1 through 4 parts by weight of said photochromic compound per 100 parts by weight of the resist resin.
Claim 18
Dependent Claim
23 words
A process according to Claim 8, wherein said positive-working resist resin is selected from the group consisting of naphtoquinonediazide photoresists and benzoquinonediazide photoresists.
References Cited (Backward Citations)
No citation records indexed.
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