EP0024625A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of producing an electrical contact on a Si substrate
Assignee: International Business Machines Corp
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Filing: 1980-08-12
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Granted: —
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Expires: 2000-08-12
Abstract
Abstract An electrical contact to a Si substrate (19) is formed by co-depositing Al and Pt or Pd (14) directly on a region of the substrate, and heating to produce a compound of the co-deposit and Si (Al,Pt,Si or Al,Pd,Si) in said region, an Al conductor layer (12) being applied before or after said heating. The contact is ohmic or Schottky depending on the dopant concentration in said region.
Inventors
- 👤 Paul Siu-Chung Ho
- 👤 Uwe Koster
- 👤 Tung-Sheng Kuan
- 👤 Iwao Ohdomari
- 👤 Arnold Reisman
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 16:15
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D62/00; H10D62/80; H10D62/83; H10D64/012; H10D64/0121; H10D64/60; H10D64/62; H10D64/64
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
63 words
A method of producing an electrical contact on a Si substrate including co-depositing A1 and at least one of the noble metals Pt and Pd, and then heating to form an Al-noble metal alloy, characterised in that the co-deposit is deposited directly on a region of the Si substrate, and the heating produces a compound of said co-deposit and Si in said region.
Claim 2
Independent Claim
63 words
A method of producing an electrical contact on a Si substrate including co-depositing A1 and at least one of the noble metals Pt and Pd, and then heating to form an Al-noble metal alloy, characterised in that the co-deposit is deposited directly on a region of the Si substrate, and the heating produces a compound of said co-deposit and Si in said region.
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1 in which said co-deposit has 50 atomic % Al. .
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 or 2 in which said heating is to a temperature between 400°C and 600°C.
Claim 5
Independent Claim
20 words
A method as claimed in any preceding claim in which said compound is A1 3 Pt 4 S i .
Claim 6
Independent Claim
21 words
A method as claimed in any of claims 1 to 3 in which said compound is A1 3 Pd 4 Si.
Claim 7
Independent Claim
18 words
A method as claimed in any preceding claim in which said electrical contact is a Schottky barrier contact.
Claim 8
Independent Claim
20 words
A method as claimed in any of claims 1 to 5 in which said electrical contact is an atomic contact.
Claim 9
Independent Claim
26 words
A method as claimed in any of the preceding claims including depositing Al for a conductor for the contact on said co-deposit prior to said heating.
Claim 10
Independent Claim
26 words
A method as claimed in any of claims 1 to 7 including depositing Al for a conductor for the contact on said co-deposit after said heating.
References Cited (Backward Citations)
No citation records indexed.
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