EP0023656A1
Expired / Lapsed
EP
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Charge storage type semiconductor device
Assignee: Toshiba Corp
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Filing: 1980-07-18
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Granted: —
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Expires: 2000-07-18
Abstract
Abstract A charge storage type semiconductor device comprising a semiconductor substrate (31) and means for accumulating charge in those portions of the substrate (31) which are located in the vicinity of one of the major surfaces of the substrate (31). The substrate (31) has a defect region (31 b) of a high de- feet density and at least one defect free region (31 a, 31 c) having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate (31). The defect region (31b) prevents unnecessary minority carriers from flowing into charge storage regions (36a, 36b)
Inventors
- 👤 Hirokazu Sekine
- 👤 Katuhiko Morimune
- 👤 Masaharu Watanabe
- 👤 Nobuo Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 10:57
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10D44/464; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/386; H10D62/50; H10D62/53; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
79 words
A charge storage type semiconductor device comprising: a semiconductor substrate having a defect region of a high defect density and at least one non-defect region, said defect free region having no crystal defects or a low defect density and being formed in the vicinity of at least the major surfaces of the substrate; and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate.
Claim 2
Dependent Claim
79 words
A charge storage type semiconductor device comprising: a semiconductor substrate having a defect region of a high defect density and at least one non-defect region, said defect free region having no crystal defects or a low defect density and being formed in the vicinity of at least the major surfaces of the substrate; and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate.
Claim 3
Dependent Claim
40 words
A charge storage type semiconductor device according to claim 1, wherein said defect region has a defect density of 10 /cm or more, and said defect free regions have a defect density of less than 10 4 /cm 2 .
Claim 4
Dependent Claim
29 words
A charge storage type semiconductor device according to claim 2, wherein the defect density of said defect region is 1 0 5 to 10 7 / cm 2 .
Claim 5
Dependent Claim
23 words
A charge storage type semiconductor device according to claim 1 or 2, wherein said defect free regions are 5 to 60 microns thick.
Claim 6
Dependent Claim
56 words
A charge storage type semiconductor device according to claim 1 or 2, wherein said means for accumulating charge comprises means for forming potential wells in those portions of said semiconductor substrate which are located near one of the major surfaces of said semiconductor substrate and means for generating and transfer charge to the potential wells formed.
Claim 7
Dependent Claim
81 words
A charge storage type semiconductor device according to claim 1 or 2, wherein a narrow defect region is formed in that portion of said semiconductor substrate which is located near one of the major surfaces of said substrate, said narrow defect region being connected to said defect region and surrounding said means for accumulating charge; and said defect free region formed in the vicinity of the major surface of said substrate is divided by said narrow defect region into island-like regions.
Claim 8
Dependent Claim
19 words
A charge storage type semiconductor device according to claim 1 or 2, which is a charge-transfer type image sensor.
Claim 9
Dependent Claim
18 words
A charge storage type semiconductor device according to claim 1 or 2, which is an MOS dynamic RAM.
Claim 10
Independent Claim
49 words
A method for producing a charge storage type semiconductor device, comprising: a first heat treatment of heating a semiconductor substrate having an oxygen concentration of 10 17 /cm 3 or more at 600 to 900°C; and a second heat treatment of heating the semiconductor substrate at 900 to 1300°C.
Claim 11
Independent Claim
49 words
A method for producing a charge storage type semiconductor device, comprising: a first heat treatment of heating a semiconductor substrate having an oxygen concentration of 10 17 /cm 3 or more at 600 to 900°C; and a second heat treatment of heating the semiconductor substrate at 900 to 1300°C.
Claim 12
Dependent Claim
72 words
A charge storage type semiconductor device comprising: a semiconductor substrate having a short carrier diffusion length region and at least one long carrier diffusion length region, said long carrier diffusion length region being formed in the vicinity of at least the major surfaces of the substrate; and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate.
Claim 13
Dependent Claim
72 words
A charge storage type semiconductor device comprising: a semiconductor substrate having a short carrier diffusion length region and at least one long carrier diffusion length region, said long carrier diffusion length region being formed in the vicinity of at least the major surfaces of the substrate; and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate.
Claim 14
Dependent Claim
34 words
A charge storage type semiconductor device according to claim 10, wherein the diffusion length of said long carrier diffusion length region is more than twice of that of said short carrier diffusion length region.
Claim 15
Dependent Claim
27 words
A charge storage type semiconductor device according to claim 10 or 11, wherein the diffusion length of said short carrier diffusion length is less than 40 microns.
References Cited (Backward Citations)
US4116719A
Cited
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