EP0021719A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for producing negative resist images, and resist images
Assignee: Fujitsu Ltd
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Filing: 1980-06-11
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Granted: —
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Expires: 2000-06-11
Abstract
Abstract A method for producing a negative resist image is disclosed, which method comprises exposing a film of a diazotype resist material, which is free from 1-hydroxyethyl-2-alkylimidazoline, to electron beam radiation in a predetermined pattern, heat treating said patternwise exposed resist film, subjecting said heat treated film to overall exposure to ultraviolet radiation and, then, developing the so treated film to remove the resist material in the area not exposed to electron beam radiation.
Inventors
- 👤 Takayuki Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 12:55
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
68 words
A method for producing a negative resist image, comprising exposing a film of a diazo-type resist material, which is free from 1-hydroxyethyl-2-alkylimdazoline, to electron beam radiation in a predetermined pattern, heat treating said patternwise exposed resist film, subjecting said heat treated film to overall exposure to ultraviolet radiation and, then, developing the so treated film to remove the resist material in'the arae not exposed to electron beam radiation.
Claim 2
Independent Claim
68 words
A method for producing a negative resist image, comprising exposing a film of a diazo-type resist material, which is free from 1-hydroxyethyl-2-alkylimdazoline, to electron beam radiation in a predetermined pattern, heat treating said patternwise exposed resist film, subjecting said heat treated film to overall exposure to ultraviolet radiation and, then, developing the so treated film to remove the resist material in'the arae not exposed to electron beam radiation.
Claim 3
Dependent Claim
29 words
A method according to claim 1, wherein said patternwise exposure to electron beam radiation is carried out at a current density of not more than 40 A/cm 2 .
Claim 4
Dependent Claim
41 words
A method according to claim 2, wherein said electron beam exposure is to a radiation dose such that about 70% of the resist film thickness is retained in the area exposed to electron beam radiation after the development of the film.
Claim 5
Dependent Claim
21 words
A method according to claim 1, wherein said heat treatment is carried out at a temperature of not higher than 100°C.
Claim 6
Dependent Claim
23 words
A method according to claim 1, wherein said overall ultraviolet exposure is to a radiation dose of 100 to 400 mw.sec/cm 2 .
Claim 7
Dependent Claim
16 words
A negative resist image produced by a method according to any one of the preceding claims.
References Cited (Backward Citations)
No citation records indexed.
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