EP0020134A1
Expired / Lapsed
EP
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Method of enhancing epitaxy and preferred orientation in films deposited on solid substrates
Assignee: Massachusetts Institute of Technology
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Filing: 1980-05-28
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Granted: —
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Expires: 2000-05-28
Abstract
Abstract The invention relates to a method of enhancing epitaxy and preferred orientation in films on solid substrates, which includes forming at predetermined locations, a plurality of artificial point defects or a surface relief structure (7) at the surface of a solid substrate (1). Thereafter a film (8) is deposited on the surface to form a substantially epitaxial or preferred orientation layer in tre film having crystalographic orientation influenced by the geometry of an artificial defect. The orienting influence of the article defects may be enhanged by applying an incident beam of energy (9) to the film (8).
Inventors
- 👤 Michael W. Geis
- 👤 Dale C. Flanders
- 👤 Henry I. Smith
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 06:43
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B1/00; C30B1/02; C30B1/06; C30B1/08; C30B29/00; C30B29/02; C30B29/06
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
96 words
A method of enhancing epitaxy and preferred orientation in films on solid substrates, which method includes the steps of intentionally forming at predetermined locations, a plurality of artificial defects (7) at the surface of a solid substrate (1) and thereafter depositing a film (8) on the surface to form a substantially epitaxial or preferred orientat- tion layer in the film having crystalographic orientat- tion influenced by the geometry of an artificial defect, characterized in that the orienting influence of the artificial defects is enhanced by applying an incident beam of energy (9) to the film (8).
Claim 2
Independent Claim
96 words
A method of enhancing epitaxy and preferred orientation in films on solid substrates, which method includes the steps of intentionally forming at predetermined locations, a plurality of artificial defects (7) at the surface of a solid substrate (1) and thereafter depositing a film (8) on the surface to form a substantially epitaxial or preferred orientat- tion layer in the film having crystalographic orientat- tion influenced by the geometry of an artificial defect, characterized in that the orienting influence of the artificial defects is enhanced by applying an incident beam of energy (9) to the film (8).
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein the beam (9) is an electron beam.
Claim 4
Dependent Claim
14 words
A method according to claim 1, wherein the beam (9) is an ion beam.
Claim 5
Dependent Claim
15 words
A method according to claim 1, wherein the beam is a beam of electromagnetic energy.
Claim 6
Independent Claim
78 words
A method of enhancing epitaxy and preferred orientation in films on solid substrates, the method including the step of intentionally forming, at a predetermined location, an artificial defect at the surface of a solid substrate, the artificial defect comprising an artificial point defect or an artificial step, and thereafter depositing a film on the surface to form a substantially epitaxial or preferred .orientation layer in the film having crystallographic orientation controlled by the geometry of the articial defect.
Claim 7
Independent Claim
78 words
A method of enhancing epitaxy and preferred orientation in films on solid substrates, the method including the step of intentionally forming, at a predetermined location, an artificial defect at the surface of a solid substrate, the artificial defect comprising an artificial point defect or an artificial step, and thereafter depositing a film on the surface to form a substantially epitaxial or preferred .orientation layer in the film having crystallographic orientation controlled by the geometry of the articial defect.
Claim 8
Dependent Claim
34 words
A method according to claim 5, further including the step of forming the artificial defect with its dimension in a direction perpendicular to the substrate surface.within the range of one atom to 1/2 micron.
Claim 9
Dependent Claim
17 words
A method according to claim 5 or claim 6, wherein the substrate comprises an amorphous solid substrate.
Claim 10
Independent Claim
58 words
A method according to any of claims 5 to 7, wherein at predetermined locations, a further artificial defect is formed at the surface of the solid substrate, the further artificial defect comprising an artificial point defect or an artificial step, the crystallographic orientation of the film subsequently deposited being influenced by the geometry of the further artificial defect.
Claim 11
Dependent Claim
24 words
A substrate having an epitaxial or preferred orientation layer on its surface, formed by a method according to any of claims 5 to 8.
Claim 12
Independent Claim
117 words
A method of enhancing epitaxy and preferred orientation in films on solid substrates which method includes the steps of intentionally forming at predetermined locations a plurality of artificial defects at the surface of a solid substrate, the artificial defects comprising artificial point defects or artificial surface relief structure, and thereafter depositing a film on the surface to form a substantially epitaxial or preferred orientation layer in the film having crystallographic orientation controlled by the geometric arrangement of adjacent artificial defects characterized in that artificial steps having sloping walls are formed among the artificial defects, the sloping walls being parallel to one another and inclined at an angle of substantially 70.5 0 or 109.5° to the substrate surface.
Claim 13
Independent Claim
117 words
A method of enhancing epitaxy and preferred orientation in films on solid substrates which method includes the steps of intentionally forming at predetermined locations a plurality of artificial defects at the surface of a solid substrate, the artificial defects comprising artificial point defects or artificial surface relief structure, and thereafter depositing a film on the surface to form a substantially epitaxial or preferred orientation layer in the film having crystallographic orientation controlled by the geometric arrangement of adjacent artificial defects characterized in that artificial steps having sloping walls are formed among the artificial defects, the sloping walls being parallel to one another and inclined at an angle of substantially 70.5 0 or 109.5° to the substrate surface.
References Cited (Backward Citations)
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