EP0020113A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1980-05-23
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Granted: —
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Expires: 2000-05-23
Abstract
Abstract In a semiconductor device comprising one or more driver transistors (Qn1) and (Qn2) one or more load elements (61, 62) each of which is connected to one of the drivertransistors, respectively, each of the driver transistors is composed of an MIS transistor formed on a first conductivity type semiconductor region (2) which is formed on a second conductivity type semiconductor substrate (1), and each of the load elements is composed of a reverse biased pn junction which is formed on the second conductivity type semiconductor substrate.
Inventors
- 👤 Hideo Itoh
- 👤 Eiji Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 17:46
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; H; H10; H10B; H10B10/00; H10D; H10D84/00; H10D84/80; H10D84/811; H10D84/817; H10D84/82; H10D84/83; H10D84/85; H10D84/858
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
73 words
A semiconductor device comprising one or more driver transistors and one or more load elements each of which is connected to one of said driver transistors, respectively, characterized in that each of said driver transistors is composed of an MIS Field Effect transistor formed on a semiconductor substrate portion, and, at least one of said load elements is composed of a reverse biased pn junction which is formed on said semiconductor substrate portion.
Claim 2
Dependent Claim
73 words
A semiconductor device comprising one or more driver transistors and one or more load elements each of which is connected to one of said driver transistors, respectively, characterized in that each of said driver transistors is composed of an MIS Field Effect transistor formed on a semiconductor substrate portion, and, at least one of said load elements is composed of a reverse biased pn junction which is formed on said semiconductor substrate portion.
Claim 3
Dependent Claim
89 words
A semiconductor device comprising one or more driver transistors and one or more load elements each of which is connected to one of said driver transistors, respectively, characterized in that each of said driver transistors is composed of an MIS Field Effect transistor formed on a first conductivity type semiconductor region which is formed on a second conductivity type semiconductor substrate portion, and, at least one of said load elements is composed of a reverse biased pn junction which is formed on said second conductivity type semiconductor substrate portion.
Claim 4
Dependent Claim
89 words
A semiconductor device comprising one or more driver transistors and one or more load elements each of which is connected to one of said driver transistors, respectively, characterized in that each of said driver transistors is composed of an MIS Field Effect transistor formed on a first conductivity type semiconductor region which is formed on a second conductivity type semiconductor substrate portion, and, at least one of said load elements is composed of a reverse biased pn junction which is formed on said second conductivity type semiconductor substrate portion.
Claim 5
Dependent Claim
33 words
A semiconductor device as set forth in claim 2, wherein said semiconductor device is'a CMIS device further comprising one or more MIS Field Effect transistors formed on said second conductivity type semiconductor substrate.
Claim 6
Dependent Claim
37 words
A semiconductor device as set forth in claim 2 or 3, wherein said first conductivity type semiconductor region is a p type semiconductor region and said second conductivity type semiconductor substrate is an n type semiconductor substrate.
Claim 7
Dependent Claim
37 words
A semiconductor device as set forth in claim 2 or 3, wherein said first conductivity type semiconductor region is an n type semiconductor region and said second conductivity type semiconductor substrate is a p type semiconductor substrate.
Claim 8
Dependent Claim
24 words
A semiconductor device as set forth in claim 4, wherein said pn junction is a leaky pn junction whose backward current is relatively large.
Claim 9
Dependent Claim
24 words
A semiconductor device as set forth in claim 5, wherein said pn junction is a leaky pn junction whose backward current is relatively large.
Claim 10
Dependent Claim
80 words
A semiconductor device as set forth in claim 6, wherein said semiconductor device is a memory device having a plurality of memory cells, each of which comprises a pair of MIS Field Effect transistors formed on said first conductivity type semiconductor region and a pair of said pn junctions, the drain electrode of each one of said MIS transistors being connected to the gate electrode of the other one of said MIS transistors and to one of said pn junctions.
Claim 11
Dependent Claim
79 words
A semiconductor device as set forth in claim 7, wherein said semiconductor device is a memory device having a plurality of memory cells, each of which comprises a pair of MIS transistors formed on said first conductivity type semiconductor region and a pair of said pn junctions, the drain electrode of each one.of said MIS Field Effect transistors being connected to the gate electrode of the other one of said MIS transistors and to one of said pn junctions.
References Cited (Backward Citations)
No citation records indexed.
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