EP0010204A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor absolute pressure transducer assembly
Assignee: Hitachi Ltd
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Filing: 1979-09-27
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Granted: —
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Expires: 1999-09-27
Abstract
Abstract A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly (20) and a glass covering member (10). The assembly (20) has a circular diaphragm portion (30) of thin silicon which is formed using etching, and a thick supporting portion (33) therearound. Piezoresistive elements (22, 24) of a piezoresistive bridge circuit and conducting paths (27) for electrically connection thereof are formed on the assembly (20). On a surface of the assembly (20), a passivating layer (31) of silicon dioxide is formed in uniform thickness, and further on a surface of the passivating layer (31) is formed a layer (34) of polysilicon on the supporting portion (33) of the assembly (20) using Ion Implantation method, or reforming a silicon dioxide layer (31) thereon. In the passivating layer (31), a contacting window (32) is formed, through which the polysilicon layer (34) is electrically connected to the silicon diaphragm assembly (20). The covering member (10) of borosilicate glass having a circular well (11) is mounted and Anodic-bonded onto the silicon diaphragm assembly (20) in contact with the'polysilicon layer (34).
Inventors
- 👤 Kazuji Yamada
- 👤 Seiko Suzuki
- 👤 Motohisa Nishihara
- 👤 Kanji Kawakami
- 👤 Hideo Sato
- 👤 Shigeyuki Kobori
- 👤 Ryosaku Kanzawa
- 👤 Minoru Takahashi
- 👤 Hitoshi Minorikawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 09:51
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0051; G01L9/0052; G01L9/0054
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
189 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly (20)having a thin pressure sensitive diaphragm portion (30)and a thick supporting portion (33) surrounding the pressure sensitive diaphragm portion (30); piezoresistive elements (21-24) constructed on the. pressure sensitive diaphragm portion (30) of said silicon diaphragm assembly (20), the resistance values of the piezoresistive elements (21-24) varying depending on the strain appearing in the diaphragm portion (30) in response to pressure applied thereto; conducting paths (25-29) constructed on said silicon diaphragm assembly (20) for electrically connecting of said piezoresistive elements (21-24); a passivating layer (31) of insulating material covering a surface of said silicon diaphragm assembly (20) on which said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed; a layer (34) of conductive material formed on a surface of said passivating layer (31); and a covering member (10) of insulating material mounted and bonded onto said silicon diaphragm assembly (20) in contact with said conductive material layer (34) on said passivating layer (31) using Anodic-Bonding method, wherein said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed on said silicon diaphragm assembly (20) using Ion Implantation method.
Claim 2
Dependent Claim
189 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly (20)having a thin pressure sensitive diaphragm portion (30)and a thick supporting portion (33) surrounding the pressure sensitive diaphragm portion (30); piezoresistive elements (21-24) constructed on the. pressure sensitive diaphragm portion (30) of said silicon diaphragm assembly (20), the resistance values of the piezoresistive elements (21-24) varying depending on the strain appearing in the diaphragm portion (30) in response to pressure applied thereto; conducting paths (25-29) constructed on said silicon diaphragm assembly (20) for electrically connecting of said piezoresistive elements (21-24); a passivating layer (31) of insulating material covering a surface of said silicon diaphragm assembly (20) on which said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed; a layer (34) of conductive material formed on a surface of said passivating layer (31); and a covering member (10) of insulating material mounted and bonded onto said silicon diaphragm assembly (20) in contact with said conductive material layer (34) on said passivating layer (31) using Anodic-Bonding method, wherein said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed on said silicon diaphragm assembly (20) using Ion Implantation method.
Claim 3
Dependent Claim
34 words
A semiconductor pressure transducer assembly as claimed in Claim 1, wherein a photoresist (203) formed on the surface of said silicon diaphragm assembly (20) is used as mask means in the Ion Implantation method.
Claim 4
Dependent Claim
226 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly (20) having a thin pressure sensitive diaphragm portion (30) and a thick supporting portion (33) surrounding the pressure sensitive diaphragm portion (30); piezoresistive elements (21-24) constructed on the pressure sensitive portion (30) of said silicon diaphragm assembly (20), the resistance values of the piezoresistive elements (21-24) varying depending on the strain appearing in the diaphragm portion (30) in response to pressure applied thereto; conducting path (25-29) constructed on said silicon diaphragm assembly (20) for electrically connecting of said piezoresistive . elements (21-24); a passivating layer (31) of insulating material covering a surface of said silicon diaphragm assembly (20) on which said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed; a layer (34) of conductive material formed on a surface of said passivating layer (31); and a covering-member (10) of insulating material mounted and bonded onto said silicon diaphragm assembly (20) in contact with said conductive material layer (34) on said passivating layer (31) using Anodic Bonding method, wherein said passivating layer (31) of insulating material is reformed on the surface of said silicon diaphragm assembly (20), on which said piezoresistive elements (21-24) and said conducting paths (25--29) are constructed, after removing an insulating material layer (201) used as mask means in diffusion method for constructing said piezoresistive elements (21-24) and said conducting paths (25-29).
Claim 5
Dependent Claim
226 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly (20) having a thin pressure sensitive diaphragm portion (30) and a thick supporting portion (33) surrounding the pressure sensitive diaphragm portion (30); piezoresistive elements (21-24) constructed on the pressure sensitive portion (30) of said silicon diaphragm assembly (20), the resistance values of the piezoresistive elements (21-24) varying depending on the strain appearing in the diaphragm portion (30) in response to pressure applied thereto; conducting path (25-29) constructed on said silicon diaphragm assembly (20) for electrically connecting of said piezoresistive . elements (21-24); a passivating layer (31) of insulating material covering a surface of said silicon diaphragm assembly (20) on which said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed; a layer (34) of conductive material formed on a surface of said passivating layer (31); and a covering-member (10) of insulating material mounted and bonded onto said silicon diaphragm assembly (20) in contact with said conductive material layer (34) on said passivating layer (31) using Anodic Bonding method, wherein said passivating layer (31) of insulating material is reformed on the surface of said silicon diaphragm assembly (20), on which said piezoresistive elements (21-24) and said conducting paths (25--29) are constructed, after removing an insulating material layer (201) used as mask means in diffusion method for constructing said piezoresistive elements (21-24) and said conducting paths (25-29).
Claim 6
Dependent Claim
197 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly (20) having a thin pressure sensitive diaphragm portion (30) and a thick supporting portion (33) surrounding the pressure sensitive diaphragm portion (30); piezoresistive elements (21-24) constructed on the pressure sensitive diaphragm portion (30) of said silicon diaphragm assembly (20), the resistance values of the piezoresistive elements (21-24) varying depending on the strain appearing in the diaphragm portion (30) in response to pressure applied thereto; conducting paths (25-29) constructed on said silicon diaphragm assembly (20) for electrically connecting of said piezoresistive elements (21-24); a passivating layer (31) of insulating material covering a surface of said silicon diaphragm assembly (20) on whin said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed; a layer (34) of conductive material formed on a surface of said passivating layer (-31); and a covering member.. (10) of insulating material mounted and bonded onto said silicon diaphragm assembly (20) in contact with said conductive material layer (34) onsaid passivating layer (31) using Anodic Bonding method, wherein. said conductive material layer (34) is formed on the surface of said passivating layer (31) on the thick supporting portion (33) of said silicon diaphragm assembly (20).
Claim 7
Dependent Claim
197 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly (20) having a thin pressure sensitive diaphragm portion (30) and a thick supporting portion (33) surrounding the pressure sensitive diaphragm portion (30); piezoresistive elements (21-24) constructed on the pressure sensitive diaphragm portion (30) of said silicon diaphragm assembly (20), the resistance values of the piezoresistive elements (21-24) varying depending on the strain appearing in the diaphragm portion (30) in response to pressure applied thereto; conducting paths (25-29) constructed on said silicon diaphragm assembly (20) for electrically connecting of said piezoresistive elements (21-24); a passivating layer (31) of insulating material covering a surface of said silicon diaphragm assembly (20) on whin said piezoresistive elements (21-24) and said conducting paths (25-29) are constructed; a layer (34) of conductive material formed on a surface of said passivating layer (-31); and a covering member.. (10) of insulating material mounted and bonded onto said silicon diaphragm assembly (20) in contact with said conductive material layer (34) onsaid passivating layer (31) using Anodic Bonding method, wherein. said conductive material layer (34) is formed on the surface of said passivating layer (31) on the thick supporting portion (33) of said silicon diaphragm assembly (20).
Claim 8
Dependent Claim
38 words
A semiconductor pressure transducer assembly as claimed in Claim 4, wherein said conductive material (34) is formed on the area of the surface of said passivating layer (31) corresponding to the contacting surface of said covering member (10).
Claim 9
Dependent Claim
52 words
A semiconductor pressure transducer assembly as claimed in Claim 1, 3 or 4, wherein in said passivating layer are formed a contacting window,(32) and said layer (34) of conductive material covers said contacting window (32), therefore, said silicon diaphragm assembly (20) and said conductive material layer (34) electrically connecting to each other.
Claim 10
Dependent Claim
35 words
A semiconductor pressure transducer assembly as claimed in Claim 1, 3 or 4, wherein said silicon diaphragm assembly (20) has a circular diaphragm portion (30) and said covering member (10) has a circular well (11).
Claim 11
Dependent Claim
23 words
A semiconductor pressure transducer assembly as claimed in Claim 1, 3 or 4, wherein said covering member (10) is made of borosilicate glass.
Claim 12
Dependent Claim
32 words
A semiconductor pressure transducer assembly as claimed in Claim 1, 3 or 4, wherein said passivating layer (31) is silicon dioxide and said conductive material of said conductive layer (34) is polysilicon.
Claim 13
Dependent Claim
23 words
A semiconductor pressure transducer assembly as claimed in Claim 1, 3 or 4, wherein said piezoresistive elements (21-24) construct a piezoresistive bridge circuit.
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