Integrated bipolar semiconductor circuit

Abstract

Abstract 1. An integrated bipolar semiconductor switching circuit comprising transistors having a high breakdown voltage of preferably 30 V, together with transistors of a high current gain, in particular l**2-L-transistors, in which, in an epitaxial layer (3) arranged on a semiconductor substrate, base zone (8) of the high current gain transistors and base zones (4) of the transistors having a high breakdown voltage are formed in such a way that the base zones (4) of the high current gain transistors are less highly doped than the base zones (8) of the transistors having a high breakdown voltage, and have a greater depth measured from the exposed surface of the epitaxial layer (3), characterized in that the epitaxial layer (3), has a constant thickness.

Inventors

• 👤 Günter Von Dr. Dipl.-Phys Häfen

Bibliographic Details