CA1154879A
Expired / Lapsed
CA
⏱️ 0.0 years remaining
Semiconductor controlled rectifier
Assignee: Mitsubishi Electric Corp
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Filing: 1980-11-17
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Granted: 1983-10-04
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Expires: 2000-11-17
Abstract
Abstract 48,919 ABSTRACT OF THE DISCLOSURE The present invention is directed to a con-trolled rectifier in which portions of the cathode base region extend into the anode base region and portions of the anode base region are in direct ohmic electrical contact with the anode electrode.
Inventors
- 👤 Yoshinori Yukimoto
Bibliographic Details
Application Number
—
Jurisdiction
CA
Data Source
google_patents
Last Synchronized
2026-11-08 16:35
CPC Classifications
—
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
179 words
A semiconductor controlled rectifier com-prising an anode base layer of n type conductivity having on portions of a first surface thereof a p type conductiv-ity anode emitter layer and on a second surface, opposed to said first surface, a p type cathode base layer, a gate electrode in ohmic electrical contact with the cathode base layer and portions of said p type conductivity cathode base layer being in direct electrical ohmic contact with a cathode electrode, remaining portions of said p type conductivity cathode base layer forming a p-n junction with an n type conductivity cathode emitter region, said n type conduc-tivity cathode emitter region being in direct electrical ohmic contact with said cathode electrode, said n type conductivity anode base layer being provided on the second surface, with p-type conductivity gate regions formed in a predetermined pattern and extending into said anode base region, another portion of said first surface of said anode base layer in direct ohmic electrical contact with an anode electrode, and said anode emitter layer in direct ohmic electrical contact with said anode electrode.
Claim 2
Dependent Claim
179 words
A semiconductor controlled rectifier com-prising an anode base layer of n type conductivity having on portions of a first surface thereof a p type conductiv-ity anode emitter layer and on a second surface, opposed to said first surface, a p type cathode base layer, a gate electrode in ohmic electrical contact with the cathode base layer and portions of said p type conductivity cathode base layer being in direct electrical ohmic contact with a cathode electrode, remaining portions of said p type conductivity cathode base layer forming a p-n junction with an n type conductivity cathode emitter region, said n type conduc-tivity cathode emitter region being in direct electrical ohmic contact with said cathode electrode, said n type conductivity anode base layer being provided on the second surface, with p-type conductivity gate regions formed in a predetermined pattern and extending into said anode base region, another portion of said first surface of said anode base layer in direct ohmic electrical contact with an anode electrode, and said anode emitter layer in direct ohmic electrical contact with said anode electrode.
Claim 3
Dependent Claim
123 words
A semiconductor controlled rectifier com-prising four adjacent regions of alternating type conduc-tivity with a p-n junction between adjacent region, a first region functioning as a cathode emitter region, a second region functioning as a cathode base region, a third region functioning as an anode base region and a fourth region functioning as an anode emitter region, a cathode electrode 9 48,919 in ohmic electrical contact with the cathode emitter region, an anode electrode in ohmic electrical contact with the anode emitter region, a gate electrode in ohmic electrical contact with the cathode base region, said cathode base region also in ohmic electrical contact with said cathode emitter electrode and said anode base regions also in ohmic electrical contact with said anode emitter electrode.
Claim 4
Dependent Claim
123 words
A semiconductor controlled rectifier com-prising four adjacent regions of alternating type conduc-tivity with a p-n junction between adjacent region, a first region functioning as a cathode emitter region, a second region functioning as a cathode base region, a third region functioning as an anode base region and a fourth region functioning as an anode emitter region, a cathode electrode 9 48,919 in ohmic electrical contact with the cathode emitter region, an anode electrode in ohmic electrical contact with the anode emitter region, a gate electrode in ohmic electrical contact with the cathode base region, said cathode base region also in ohmic electrical contact with said cathode emitter electrode and said anode base regions also in ohmic electrical contact with said anode emitter electrode.
Claim 5
Dependent Claim
43 words
The controlled rectifier of claim 2 in which gate regions extend from said cathode gate region into said anode region, said gate regions being vertically aligned with those portions of said anode base regions in ohmic electrical contact with said anode emitter elec-trode.
References Cited (Backward Citations)
No citation records indexed.
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